Low Power Ku- and Ka-Band SiGe HBT Low-Noise Amplifiers

被引：0

作者：

Ahmed, Syed Sharfuddin ^{[1
]}

Schumacher, Hermann ^{[1
]}

机构：

[1] Ulm Univ, Inst Electron Devices & Circuits, D-89081 Ulm, Germany

来源：

2020 AUSTROCHIP WORKSHOP ON MICROELECTRONICS (AUSTROCHIP) | 2020年

关键词：

Ku-band; Ka-band; low-noise amplifier (LNA); satellite communications; SiGe HBT; phased-array; low power; LNA; GHZ; MW;

D O I：

10.1109/austrochip51129.2020.9232993

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents low power, high gain, low-noise amplifiers (LNA) at Ku- and Ka-band frequencies in a 0.13 mu m SiGe:C BiCMOS technology. The designed LNAs fulfill the RF performance requirements of active phased-array antennas for satellite communications or 5G applications while consuming less than 6 mW of power. The Ku-band LNA exhibits a peak gain of 28 dB with a 3-dB bandwidth (BW) of 3.6 GHz (9.2 - 12.8 GHz), noise figure (NF) of <1.9 dB and IP1dB of -30 dBm. The Ka-band LNA bandwidth extends between 18-21.1 GHz while providing 26 dB of peak gain with a noise figure of <2.3 dB and IP1dB of -30 dBm. Among published LNAs in Silicon technologies, the designed LNAs demonstrate the best figure of merit, considering noise, gain, linearity, and consumed power.

引用

页码：57 / 61

页数：5

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