Interlayer doping with p-type dopant for charge balance in indium phosphide (InP)-based quantum dot light-emitting diodes

被引：26
作者：
Kim, Hyejin [1 ]
Lee, Woosuk [1 ]
Moon, Hyungsuk [1 ]
Kim, Sun Jung [1 ]
Chung, Ho Kyoon [2 ]
Chae, Heeyeop [1 ,2 ]
机构：
[1] Sungkyunkwan Univ SKKU, Sch Chem Engn, 2066 Seoburo, Suwon 16419, South Korea
[2] Sungkyunkwan Univ SKKU, SKKU Adv Inst Nanotechnol SAINT, 2066 Seoburo, Suwon 16419, South Korea
来源：
OPTICS EXPRESS | 2019年 / 27卷 / 16期
基金：
新加坡国家研究基金会;
关键词：
TURN-ON-VOLTAGE; HOLE TRANSPORT LAYER; HIGH-EFFICIENCY; HIGHLY EFFICIENT; PERFORMANCE; DIFFUSION; POLYMER; FILMS;
D O I：
10.1364/OE.27.0A1287
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A 2,3,4,6-tetralluoro-7,7,8,8,-tetracyanoquinodimethane (F4-TCNQ) doping inter-layer was developed to improve charge imbalance and the efficiency in indium phosphide (InP)-based quantum dot light-emitting diodes (QLEDs). The doping layer was coated between a hole injecting layer (HIL) and a hole transport layer (HTL) and successfully diffused with thermal annealing. This doping reduces the hole injection barrier and improves the charge balance of InP-based QLEDs, resulting in enhancement of an external quantum efficiency (EQE) of 3.78% (up from 1.6%) and a power efficiency of 6.41 lm/W (up from 2.77 lm/W). This work shows that F4-TCNQ interlayer doping into both HIL and HTL facilitates hole injection and can provide an efficient solution of improving charge balance in QLED for the device efficiency. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
引用
收藏
页码：A1287 / A1296
页数：10
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