Significantly enhanced energy conversion efficiency of CuInS2 quantum dot sensitized solar cells by controlling surface defects

被引:87
作者
Wang, Guoshuai [1 ,2 ]
Wei, Huiyun [1 ,2 ]
Shi, Jiangjian [1 ,2 ]
Xu, Yuzhuan [1 ,2 ]
Wu, Huijue [1 ,2 ]
Luo, Yanhong [1 ,2 ]
Li, Dongmei [1 ,2 ]
Meng, Qingbo [1 ,2 ]
机构
[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condense Matter Phys, Beijing Key Lab New Energy Mat & Devices,Key Lab, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China
关键词
CuInS2; Colloidal quantum dot; Sensitized solar cells; Cu/In molar ratio engineering; Surface defect states; OPEN-CIRCUIT VOLTAGE; SEMICONDUCTOR NANOCRYSTALS; THIN-FILMS; PERFORMANCE; PHOTOLUMINESCENCE; RECOMBINATION; NANOPARTICLES; NANOMATERIALS; PHOTOVOLTAICS; NONINJECTION;
D O I
10.1016/j.nanoen.2017.03.008
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Aiming at improving the cell performance of colloidal CuInS2 (CIS) quantum dot sensitized solar cells (QDSCs), a modified synthetic method has been developed to prepare CIS quantum dots (QDs), and Cu/In non-stoichiometric ratios of CIS QDs have been carefully controlled for the first time. It is found that, with the amount of In element increasing, the short-circuit photocurrent density (J(sc)), open-circuit voltage (V-oc) and fill factor (FF) of CIS QDSCs will gradually increase, leading to the cell performance enhanced. Up to 8.54% PCE has been achieved when the Cu/In precursor molar ratio is 1/4, which is a new record for the CIS-based solar cells. Electrochemical impedance analysis, open-circuit voltage-decay (OCVD) and time-resolved photoluminescence analyses further confirm that In-rich CIS QDs can bring about surface defect states significantly reduced, thus leading to the charge recombination at TiO2/CIS/electrolyte interfaces efficiently inhibited. Interfacial electron recombination mechanism of the solar cells is proposed that photo-generated carrier recombination in the cell is mainly dominated by the electron transfer process from the conduction band of TiO2 to unoccupied defect states of CIS, which has a great influence on the FF of the device. This work provides a new and simple way to reduce the loss of photo-generated carriers, improve the interfacial carrier collection and achieve highly efficient QDSCs.
引用
收藏
页码:17 / 25
页数:9
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