Pulsed x-ray detector based on Fe doped β-Ga2O3 single crystal

被引：28

作者：

Zhou, Leidang ^{[1
,2
]}

Chen, Liang ^{[3
]}

Ruan, Jinlu ^{[3
]}

Lu, Xing ^{[4
]}

Liu, Bo ^{[5
]}

Gao, Runlong ^{[6
]}

Li, Yang ^{[7
]}

Geng, Li ^{[1
]}

Ouyang, Xiaoping ^{[3
]}

机构：

[1] Xi An Jiao Tong Univ, Sch Microelect, Xian 710049, Peoples R China

[2] State Key Lab Multiphase Flow Power Engn, Xian 710049, Peoples R China

[3] Northwest Inst Nucl Technol, State Key Lab Intense Pulsed Radiat Simulat & Eff, Xian 710024, Peoples R China

[4] Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China

[5] Tongji Univ, Sch Phys Sci & Engn, Inst Adv Study, Key Lab Adv Microstruct Mat,MOE, Shanghai, Peoples R China

[6] Xi An Jiao Tong Univ, Sch Nucl Sci & Technol, Xian 710049, Peoples R China

[7] Nanjing Univ Aeronaut & Astronaut, Dept Nucl Sci & Engn, Nanjing 211106, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2021年 / 54卷 / 27期

基金：

中国国家自然科学基金;

关键词：

Ga2O3; x-ray detectors; pulse measurements;

D O I：

10.1088/1361-6463/abf53b

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

beta-Ga2O3 has shown great potential for x-ray detection. In this paper, we demonstrate a nanosecond fast-response metal-semiconductor-metal x-ray detection based on Fe doped semi-insulating beta-Ga2O3 single crystal. Material characterizations revealed that the iron substituting for gallium (Fe-Ga) and oxygen vacancy (V (O)) were the main defects within the beta-Ga2O3 and led to a high resistivity property of the material. The detector feathered a low dark current similar to 270 pA (955 x pA cm(-2)) at 800 V and the x-ray detection process was slightly affected by the photodonductive gain. To x-ray illumination, the detector exhibited a low noise-equivalent dose rate similar to 4.1 x 10(-7) Gy(air) s(-1) Hz(-0.5), a response sensitivity of 23.2 nC Gy(air) (-1) and a fast transient response (<20 ms). In addition, a pulsed x-ray detection in 50 ns was achieved and the time resolution of the beta-Ga2O3 detector was revealed to be beta-Ga2O3-based detector was promising for fast x-ray detection application.

引用

页数：7

共 26 条

[1] Stimulated X-ray emission for materials science [J].

Beye, M. ;

Schreck, S. ;

Sorgenfrei, F. ;

Trabant, C. ;

Pontius, N. ;

Schuessler-Langeheine, C. ;

Wurth, W. ;

Foehlisch, A. .

NATURE, 2013, 501 (7466) :191-+

[2] Charge Trapping in Al2O3/β-Ga2O3-Based MOS Capacitors [J].

Bhuiyan, Maruf A. ;

Zhou, Hong ;

Jiang, Rong ;

Zhang, En Xia ;

Fleetwood, Daniel M. ;

Ye, Peide D. ;

Ma, Tso-Ping .

IEEE ELECTRON DEVICE LETTERS, 2018, 39 (07) :1022-1025

[3] A review of ion beam induced charge microscopy [J].

Breese, M. B. H. ;

Vittone, E. ;

Vizkelethy, G. ;

Sellin, P. J. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 264 (02) :345-360

[4] Relative Navigation Between Two Spacecraft Using X-ray Pulsars [J].

Emadzadeh, Amir Abbas ;

Speyer, Jason L. .

IEEE TRANSACTIONS ON CONTROL SYSTEMS TECHNOLOGY, 2011, 19 (05) :1021-1035

[5] Temporal characteristic analysis of laser-modulated pulsed X-ray source for space X-ray communication [J].

Hang, Shuang ;

Liu, Yunpeng ;

Li, Huan ;

Tang, Xiaobin ;

Chen, Da .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2018, 887 :18-26

[6] Fast X-ray detectors based on bulk β-Ga2O3 (Fe) [J].

Hany, Ibrahim ;

Yang, Ge ;

Chung, Ching-Chang .

JOURNAL OF MATERIALS SCIENCE, 2020, 55 (22) :9461-9469

[7] Low temperature cathodoluminescence study of Fe-doped β-Ga2O3 [J].

Hany, Ibrahim ;

Yang, Ge ;

Zhou, Chuanzhen Elaine ;

Sun, Cheng ;

Gundogdu, Kenan ;

Seyitliyev, Dovletgeldi ;

Danilov, Evgeny O. ;

Castellano, Felix N. ;

Sun, Dali ;

Vetter, Eric .

MATERIALS LETTERS, 2019, 257

[8] High-Temperature β-Ga2O3 Schottky Diodes and UVC Photodetectors Using RuOx Contacts [J].

Hou, Caixia ;

Gazoni, Rodrigo M. ;

Reeves, Roger J. ;

Allen, Martin W. .

IEEE ELECTRON DEVICE LETTERS, 2019, 40 (10) :1587-1590

[9] Iron and intrinsic deep level states in Ga2O3 [J].

Ingebrigtsen, M. E. ;

Varley, J. B. ;

Kuznetsov, A. Yu. ;

Svensson, B. G. ;

Alfieri, G. ;

Mihaila, A. ;

Badstubner, U. ;

Vines, L. .

APPLIED PHYSICS LETTERS, 2018, 112 (04)

[10] Multicolor soft X-ray imaging of Z-pinch radiation sources on the Z-machine pulsed-power driver [J].

Jones, Brent ;

Coverdale, Christine A. ;

Mazarakis, Michael G. .

IEEE TRANSACTIONS ON PLASMA SCIENCE, 2008, 36 (04) :1276-1277

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