n-type Ge/SiGe quantum cascade heterostructures for THz emission

被引:0
作者
Stark, D. [1 ]
Persichetti, L. [2 ]
Montanari, M. [2 ]
Ciano, C. [2 ]
Di Gaspare, L. [2 ]
De Seta, M. [2 ]
Zoellner, M. [3 ]
Skibitzki, O. [3 ]
Capellini, G. [2 ,3 ]
Ortolani, M. [4 ]
Baldassarre, L. [4 ]
Virgilio, M. [5 ]
Grange, T. [6 ]
Birner, S. [6 ]
Rew, K. [7 ]
Paul, D. J. [7 ]
Faist, J. [1 ]
Scalari, G. [1 ]
机构
[1] Swiss Fed Inst Technol, Inst Quantum Elect, Auguste Piccard Hof 1, CH-8093 Zurich, Switzerland
[2] Univ Roma Tre, Dipartimento Sci, Vle G Marconi 446, I-00146 Rome, Italy
[3] IHP Leibniz Inst Innovat Mikroelekt, Technol Pk 25, D-15236 Frankfurt, Oder, Germany
[4] Univ Roma La Sapienza, Dipartimento Fis, Piazzale A Moro 2, I-00185 Rome, Italy
[5] Univ Pisa, Dipartimento Fis E Fermi, Largo Ponrecorvo 3, I-56127 Pisa, Italy
[6] Nextnano GmbH, Lichtenbergstr 8, D-85748 Garching, Germany
[7] Univ Glasgow, Sch Engn, Rankine Bldg,Oakfield Ave, Glasgow G12 8LT, Lanark, Scotland
来源
2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS EUROPE & EUROPEAN QUANTUM ELECTRONICS CONFERENCE (CLEO/EUROPE-EQEC) | 2019年
关键词
D O I
10.1109/cleoe-eqec.2019.8872902
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页数:1
相关论文
共 50 条
  • [41] THz time domain spectroscopic study of charged n-type CdSe quantum dots
    Mandal, Pankaj K.
    Chikan, Viktor
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2007, 233
  • [42] QUANTUM THERMOMAGNETIC EFFECTS IN N-TYPE INSB AND N-TYPE INAS
    GADZHIALIEV, MM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (07): : 833 - +
  • [43] High quality Ge layers for Ge/SiGe quantum well heterostructures using chemical vapor deposition
    Nigro, Arianna
    Jutzi, Eric
    Forrer, Nicolas
    Hofmann, Andrea
    Gadea, Gerard
    Zardo, Ilaria
    PHYSICAL REVIEW MATERIALS, 2024, 8 (06):
  • [44] n-type Si/SiGe resonant tunnelling diodes
    Paul, DJ
    See, P
    Zozoulenko, IV
    Berggren, KF
    Holländer, B
    Mantl, S
    Griffin, N
    Coonan, BP
    Redmond, G
    Crean, GM
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 89 (1-3): : 26 - 29
  • [45] Design and fabrication of Si/SiGe n-type MODFETs
    Gluck, M
    Hackbarth, T
    Birk, M
    Haas, A
    Kohn, E
    Konig, U
    PHYSICA E, 1998, 2 (1-4): : 763 - 767
  • [46] Design rules for n-type SiGe hetero FETs
    Konig, U
    Gluck, M
    Gruhle, A
    Hock, G
    Kohn, E
    Bozon, B
    Nuernbergk, D
    Ostermann, T
    Hagelauer, R
    SOLID-STATE ELECTRONICS, 1997, 41 (10) : 1541 - 1547
  • [47] Design rules for n-type SiGe Hetero FETs
    Daimler-Benz AG, Ulm, Germany
    Solid State Electron, 10 (1541-1547):
  • [48] Growth and characterization of strain-symmetried Si/SiGe THz quantum cascade structures
    Zhao, M
    Ni, WX
    Townsend, P
    Lynch, SA
    Paul, DJ
    Hsu, CC
    Chang, MN
    2005 2nd IEEE International Conference on Group IV Photonics, 2005, : 10 - 12
  • [49] Design and simulation of losses in Ge/SiGe terahertz quantum cascade laser waveguides
    Gallacher, K.
    Ortolani, M.
    Rew, K.
    Ciano, C.
    Baldassarre, L.
    Virgilio, M.
    Scalari, G.
    Faist, J.
    Di Gaspare, L.
    De Seta, M.
    Capellini, G.
    Grange, T.
    Birner, S.
    Paul, D. J.
    OPTICS EXPRESS, 2020, 28 (04) : 4786 - 4800
  • [50] THE THEORY OF THE PHOTOABSORPTION IN N-TYPE SI-SIGE QUANTUM-WELL INFRARED PHOTODETECTORS
    SHADRIN, VD
    COON, VT
    SERZHENKO, FL
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (11) : 7747 - 7752