Large enhancement of photocatalytic activity in ZnO thin films grown by plasma-enhanced atomic layer deposition

被引：23

作者：

Omerzu, Ales ^{[1
,2
]}

Peter, Robert ^{[1
,2
]}

Jardas, Daria ^{[1
,2
]}

Turel, Iztok ^{[3
]}

Salamon, Kresimir ^{[4
]}

Podlogar, Matejka ^{[5
]}

Vengust, Damjan ^{[5
]}

Badovinac, Ivana Jelovica ^{[1
,2
]}

Piltaver, Ivna Kavre ^{[1
,2
]}

Petravic, Mladen ^{[1
,2
]}

机构：

[1] Univ Rijeka, Dept Phys, R Matejcic 2, Rijeka 51000, Croatia

[2] Univ Rijeka, Ctr Micro & Nanosci & Technol, R Matejcic 2, Rijeka 51000, Croatia

[3] Univ Ljubljana, Fac Chem & Chem Technol, Vecna Pot 113, Ljubljana 1000, Slovenia

[4] Rudjer Boskovic Inst, Bijenicka Cesta 54, HR-10000 Zagreb, Croatia

[5] Jozef Stefan Inst, Jamova 39, Ljubljana 1000, Slovenia

来源：

SURFACES AND INTERFACES | 2021年 / 23卷

关键词：

Zinc oxide; Thin film; Atomic layer deposition; Plasma; Photocatalysis; C-PLANE SAPPHIRE; ZINC-OXIDE; DEGRADATION;

D O I：

10.1016/j.surfin.2021.100984

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this work, we present a large, tenfold enhancement in the photocatalytic activity of thin ZnO films grown by plasma-enhanced atomic layer deposition (PE-ALD) at 100 degrees C, compared to values obtained for thin ZnO films deposited by a conventional thermal ALD method at the same temperature. Thus, we have demonstrated that we can deposit thin ZnO films using the PE-ALD method both at low temperatures and with a high photocatalytic ability. A number of structural (SEM, EDX, HRTEM, GIXRD, XRR, XPS, SIMS) and optical (UV-Vis, PL) experimental techniques have been employed to elucidate a possible physical origin of the observed remarkable difference in the photocatalytic activity of thin ZnO films grown by the PE-ALD method compared to those grown by the thermal ALD method.

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页数：7

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