Copper interface induced relaxation of TiO2(110)-1X1

被引：17

作者：

Charlton, G ^{[1
]}

Howes, PB

Muryn, CA

Raza, H

Jones, N

Taylor, JSG

Norris, C

McGrath, R

Norman, D

Turner, TS

Thornton, G

机构：

[1] Univ Manchester, IRC Surface Sci, Manchester M13 9PL, Lancs, England

[2] Univ Manchester, Dept Chem, Manchester M13 9PL, Lancs, England

[3] Univ Wales Coll Cardiff, Dept Phys & Astron, Cardiff CF2 3YB, S Glam, Wales

[4] Univ Leicester, Dept Phys & Astron, Leicester LE1 7RH, Leics, England

[5] Univ Liverpool, IRC Surface Sci, Liverpool L69 3BX, Merseyside, England

[6] Univ Liverpool, Dept Phys, Liverpool L69 3BX, Merseyside, England

[7] SERC, Daresbury Lab, CCLRC, Warrington WA4 4AD, Cheshire, England

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.61.16117

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Surface x-ray diffraction has been used to examine the effect of a Cu overlayer on the bulk structural relaxations of TiO2(110) 1 x 1). The Ti atoms at this buried interface are at close to their bulk-terminated positions, representing a derelaxation from the clean surface positions by up to about 0.2 Angstrom. In contrast, O atom vertical and lateral displacements are enhanced, with values of up to 0.4 +/- 0.1 Angstrom and 0.6 +/- 0.1 Angstrom, respectively. This enhanced relaxation is consistent with Cu-O bonding.

引用

页码：16117 / 16120

页数：4

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