Infrared dielectric functions and phonon modes of wurtzite MgxZn1-xO (x≤0.2)

被引：65
作者：
Bundesmann, C
Schubert, M
Spemann, D
Butz, T
Lorenz, M
Kaidashev, EM
Grundmann, M
Ashkenov, N
Neumann, H
Wagner, G
机构：
[1] Univ Leipzig, Fak Phys & Geowissensch, Inst Expt Phys 2, D-04103 Leipzig, Germany
[2] Inst Oberflachenmodifizierung EV, D-04303 Leipzig, Germany
[3] Univ Leipzig, Inst Nichtklass Chem EV, D-04318 Leipzig, Germany
来源：
APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 13期
关键词：
D O I：
10.1063/1.1509862
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Infrared dielectric function spectra and phonon modes with polarization parallel and perpendicular to the c axis of high quality, highly relaxed, and single crystalline wurtzite MgxZn1-xO films with 0less than or equal toxless than or equal to0.2 prepared by pulsed-laser deposition on c-plane sapphire substrates were obtained from infrared spectroscopic ellipsometry (380-1200 cm(-1)) and Raman scattering studies. A two-mode behavior is found for the modes with E-1 symmetry, a lattice mode and an impurity-type mode are obtained for the A(1) symmetry phonons. Model dielectric function spectra will become useful for future infrared ellipsometry analysis of complex MgxZn1-xO-based heterostructures. (C) 2002 American Institute of Physics.
引用
收藏
页码：2376 / 2378
页数：3
相关论文
共 21 条
[1]   FIRST-ORDER RAMAN EFFECT IN WURTZITE-TYPE CRYSTALS [J].
ARGUELLO, CA ;
ROUSSEAU, DL ;
PORTO, SPS .
PHYSICAL REVIEW, 1969, 181 (03) :1351-&
[2]  
ASHKENOV N, UNPUB
[3]  
Azzam RM, 1989, ELLIPSOMETRY POLARIZ
[4]   Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire [J].
Choopun, S ;
Vispute, RD ;
Noch, W ;
Balsamo, A ;
Sharma, RP ;
Venkatesan, T ;
Iliadis, A ;
Look, DC .
APPLIED PHYSICS LETTERS, 1999, 75 (25) :3947-3949
[5]   Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films [J].
Choopun, S ;
Vispute, RD ;
Yang, W ;
Sharma, RP ;
Venkatesan, T ;
Shen, H .
APPLIED PHYSICS LETTERS, 2002, 80 (09) :1529-1531
[6]   Infrared dielectric function and phonon modes of highly disordered (AlxGa1-x)0.52In0.48P -: art. no. 155206 [J].
Hofmann, T ;
Leibiger, G ;
Gottschalch, V ;
Pietzonka, I ;
Schubert, M .
PHYSICAL REVIEW B, 2001, 64 (15)
[7]  
Kaldis E., 1981, CURRENT TOPICS MAT S, V7, P143
[8]   Free-carrier and phonon properties of n- and p-type hexagonal GaN films measured by infrared ellipsometry [J].
Kasic, A ;
Schubert, M ;
Einfeldt, S ;
Hommel, D ;
Tiwald, TE .
PHYSICAL REVIEW B, 2000, 62 (11) :7365-7377
[9]   Effective electron mass and phonon modes in n-type hexagonal InN -: art. no. 115206 [J].
Kasic, A ;
Schubert, M ;
Saito, Y ;
Nanishi, Y ;
Wagner, G .
PHYSICAL REVIEW B, 2002, 65 (11) :1152061-1152067
[10]   High-quality Y-Ba-Cu-O thin films by PLD -: Ready for market applications [J].
Lorenz, M ;
Hochmuth, H ;
Natusch, D ;
Kusunoki, M ;
Svetchnikov, VL ;
Riede, V ;
Stanca, I ;
Kästner, G ;
Hesse, D .
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2001, 11 (01) :3209-3212
123