Wafer-scale epitaxial graphene on SiC for sensing applications

被引：3

作者：

Karlsson, Mikael ^{[1
,2
]}

Wang, Qin ^{[1
]}

Zhao, Yichen ^{[2
]}

Zhao, Wei ^{[1
,2
]}

Toprak, Muhammet S. ^{[2
]}

Iakimov, Tihomir ^{[3
]}

Ali, Amer ^{[3
]}

Yakimova, Rositza ^{[3
]}

Syvajarvi, Mikael ^{[3
]}

Ivanov, Ivan G. ^{[4
]}

机构：

[1] Acreo Swedish ICT AB, Dept Sensor Syst, Box 1070, SE-16440 Kista, Sweden

[2] KTHRoyal Inst Technol, Dept Mat & Nano Phys, Kista, Sweden

[3] Graphens AB, SE-58330 Linkoping, Sweden

[4] Linkoping Univ, IFM, Semicond Mat, SE-58183 Linkoping, Sweden

来源：

MICRO+NANO MATERIALS, DEVICES, AND SYSTEMS | 2015年 / 9668卷

关键词：

Graphene; SiC; wafer-scale; sensors;

D O I：

10.1117/12.2202440

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The epitaxial graphene-on-silicon carbide (SiC-G) has advantages of high quality and large area coverage owing to a natural interface between graphene and SiC substrate with dimension up to 100 mm. It enables cost effective and reliable solutions for bridging the graphene-based sensors/devices from lab to industrial applications and commercialization. In this work, the structural, optical and electrical properties of wafer-scale graphene grown on 2 '' 4H semi-insulating (SI) SiC utilizing sublimation process were systemically investigated with focus on evaluation of the graphene's uniformity across the wafer. As proof of concept, two types of glucose sensors based on SiC-G/Nafion/Glucose-oxidase (GOx) and SiC-G/Nafion/Chitosan/GOx were fabricated and their electrochemical properties were characterized by cyclic voltammetry (CV) measurements. In addition, a few similar glucose sensors based on graphene by chemical synthesis using modified Hummer's method were also fabricated for comparison.

引用

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