Influence of segregation on the composition of GaAs1-xSbx solid solutions grown by liquid-phase epitaxy

被引：0
|
作者：
Biryulin, YF [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2002年 / 36卷 / 12期
关键词：
Solid Solution; Liquid Phase; Magnetic Material; Electromagnetism; Epitaxial Growth;
D O I：
10.1134/1.1529240
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Physical and physicochemical processes potentially responsible for the gradient in the composition of the liquid phase in epitaxial growth of GaAs1- xSbx films were analyzed. It is shown that gravity-induced liquation is the dominant mechanism in the case under consideration. (C) 2002 MAIK "Nauka / Interperiodica".
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页码：1323 / 1325
页数：3
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