Effect of 8 MeV electron irradiation on electrical properties of CuInSe2 thin films

被引：15

作者：

Tanaka, T ^{[1
]}

Yamaguchi, T

Wakahara, A

Yoshida, A

Taniguchi, R

Matsuda, Y

Fujishiro, M

机构：

[1] Saga Univ, Fac Sci & Engn, Dept Elect & Elect Engn, Saga 8408502, Japan

[2] Wakayama Coll Technol, Dept Elect Engn, Gobo 6440023, Japan

[3] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 4418580, Japan

[4] Univ Osaka Prefecture, Adv Sci & Technol Res Inst, Sakai, Osaka 5998570, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2003年 / 75卷 / 1-2期

关键词：

CuInSe2; radiation damage; electrical property; solar cell; thin film;

D O I：

10.1016/S0927-0248(02)00117-4

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Radiation damages due to 8 MeV electron irradiation in electrical properties of CuInSe2 thin films have been investigated. The n-type CuInSe2 films in which the carrier concentration was about 3 x 10(16) cm(-3), were epitaxially grown on a GaAs(0 0 1) substrate by RF diode sputtering. No significant change in the electrical properties was observed under the electron fluence <3 x 10(16) e cm(-2). As the electron fluence exceeded 10(17) e cm(-2), both the carrier concentration and Hall mobility slightly decreased. The carrier removal rate was estimated to be about 0.8 cm(-1), which is slightly lower than that of III-V compound materials. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：115 / 120

页数：6

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