Spectroscopic characterization of Praseodymium doped Gallium Nitride powder prepared by a Na flux method

被引：9
作者：
Brown, E. [1 ]
Hommerich, U. [1 ]
Yamada, T. [2 ]
Yamane, H. [2 ]
Zavada, J. M. [3 ]
机构：
[1] Hampton Univ, Dept Phys, Hampton, VA 23668 USA
[2] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan
[3] N Carolina State Univ, Dept Elect Engn, Raleigh, NC 27695 USA
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2009年 / 488卷 / 02期
基金：
美国国家科学基金会;
关键词：
Semiconductors; Light absorption and reflection; Luminescence; PR-IMPLANTED GAN; OPTICAL-PROPERTIES; PHOTOLUMINESCENCE; EU; ALXGA1-XN; EMISSION; FLUORESCENCE; GROWTH; FILMS; ER;
D O I：
10.1016/j.jallcom.2008.11.029
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The photoluminescence (PL) properties of Pr3+ doped GaN powders prepared by a Na flux method were investigated. Under above- and below-gap excitation, GaN:Pr powders exhibited intense red emission lines centered at similar to 650 nm corresponding to the intra-4f transition (3)p(0) -> F-3(2) of Pr3+. In addition, weak infrared PL bands were observed from lower excited states of Pr3+ at similar to 960, similar to 1300, and similar to 1500-1700 nm. A temperature dependent study of the red emission showed that the integrated PL intensity decreased by a factor of two under above-gap excitation for the temperature range 10-300 K. No significant thermal quenching of the red Pr3+ PL was observed under below-gap excitation. Time-resolved emission studies revealed that the decay transient of the red PL was characterized by a fast non-exponential decay followed by a slower decaying exponential component. The non-exponential decay can be attributed to cross-relaxation processes among Pr3+ ions, whereas the exponential component suggests the existence of isolated Pr3+ centers not affected by emission quenching through cross-relaxations. (C) 2008 Elsevier B.V. All rights reserved.
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收藏
页码：628 / 631
页数：4
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