Composition of Gold Alloy Seeded InGaAs Nanowires in the Nucleation Limited Regime

被引:35
作者
Johansson, Jonas [1 ]
Ghasemi, Masoomeh [1 ]
机构
[1] Lund Univ, NanoLund & Solid State Phys, POB 118, S-22100 Lund, Sweden
基金
瑞典研究理事会;
关键词
STRESS-DRIVEN NUCLEATION; LIGHT-EMITTING-DIODES; III-V NANOWIRES; SURFACE-TENSION; QUANTUM DOTS; GROWTH; PHASE; SHAPE; TRANSISTORS; ISLANDS;
D O I
10.1021/acs.cgd.6b01653
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We explain the composition of gold alloy particle seeded InGaAs, nanowires the nucleation limited regime. We use binary-nucleation modeling to account for the nucleation of InGaAs- from a supersaturated quaternary liquid alloy particle containing Au, In, Ga, and As. In our modeling we use realistic chemical potential differences between the seed particle and the nanowire. The chemical potentials are calculated from assessed thermodynamic parameters for Au, In, Ga, As, InAs, and GaAs in all relevant phases. Using binary nucleation theory we are able to link the,composition of the seed particle to the composition of the nanowire under different conditions. We vary the seed particle concentrations of As, Ga, and In and the temperature. For each of these conditions, we calculate the Gibbs free energy landscape for nucleation. The size and composition of the critical nucleus is given by the location of the saddle point in this free energy landscape. We foresee that these results will be essential for understanding the limitations of composition control in gold alloy seeded IriGaAs nanowires.
引用
收藏
页码:1630 / 1635
页数:6
相关论文
共 46 条
[1]   Understanding the growth and composition evolution of gold-seeded ternary InGaAs nanowires [J].
Ameruddin, A. S. ;
Caroff, P. ;
Tan, H. H. ;
Jagadish, C. ;
Dubrovskii, V. G. .
NANOSCALE, 2015, 7 (39) :16266-16272
[2]   InxGa1-xAs nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphology [J].
Ameruddin, Amira S. ;
Fonseka, H. Aruni ;
Caroff, Philippe ;
Wong-Leung, Jennifer ;
Veld, Roy L. M. Op Het ;
Boland, Jessica L. ;
Johnston, Michael B. ;
Tan, Hark Hoe ;
Jagadish, Chennupati .
NANOTECHNOLOGY, 2015, 26 (20) :1-10
[3]   Reference Data for the Density and Viscosity of Liquid Cadmium, Cobalt, Gallium, Indium, Mercury, Silicon, Thallium, and Zinc [J].
Assael, Marc J. ;
Armyra, Ivi J. ;
Brillo, Juergen ;
Stankus, Sergei V. ;
Wu, Jiangtao ;
Wakeham, William A. .
JOURNAL OF PHYSICAL AND CHEMICAL REFERENCE DATA, 2012, 41 (03)
[4]   Radial Nanowire Light-Emitting Diodes in the (AlxGa1-x)yIn1-yP Material System [J].
Berg, Alexander ;
Yazdi, Sadegh ;
Nowzari, Ali ;
Storm, Kristian ;
Jain, Vishal ;
Vainorius, Neimantas ;
Samuelson, Lars ;
Wagner, Jakob B. ;
Borgstrom, Magnus T. .
NANO LETTERS, 2016, 16 (01) :656-662
[5]   InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors [J].
Borg, B. Mattias ;
Dick, Kimberly A. ;
Ganjipour, Bahram ;
Pistol, Mats-Erik ;
Wernersson, Lars-Erik ;
Thelander, Claes .
NANO LETTERS, 2010, 10 (10) :4080-4085
[7]   Anomalous Zero-Bias Conductance Peak in a Nb-InSb Nanowire-Nb Hybrid Device [J].
Deng, M. T. ;
Yu, C. L. ;
Huang, G. Y. ;
Larsson, M. ;
Caroff, P. ;
Xu, H. Q. .
NANO LETTERS, 2012, 12 (12) :6414-6419
[8]   Zeldovich Nucleation Rate, Self-Consistency Renormalization, and Crystal Phase of Au-Catalyzed GaAs Nanowires [J].
Dubrovskii, V. G. ;
Grecenkov, J. .
CRYSTAL GROWTH & DESIGN, 2015, 15 (01) :340-347
[9]   Stress-Driven Nucleation of Three-Dimensional Crystal Islands: From Quantum Dots to Nanoneedles [J].
Dubrovskii, V. G. ;
Sibirev, N. V. ;
Zhang, X. ;
Suris, R. A. .
CRYSTAL GROWTH & DESIGN, 2010, 10 (09) :3949-3955
[10]   Growth kinetics and crystal structure of semiconductor nanowires [J].
Dubrovskii, V. G. ;
Sibirev, N. V. ;
Harmand, J. C. ;
Glas, F. .
PHYSICAL REVIEW B, 2008, 78 (23)