Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides

被引：519
作者：
Ayari, Anthony
Cobas, Enrique
Ogundadegbe, Ololade
Fuhrer, Michael S.
机构：
[1] Univ Maryland, Dept Phys, College Pk, MD 20742 USA
[2] Univ Maryland, Ctr Superconduct Res, College Pk, MD 20742 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2007年 / 101卷 / 01期
关键词：
D O I：
10.1063/1.2407388
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ultrathin crystals of the layered transition-metal dichalcogenide MoS2 (semiconducting) and TaS2 (metallic) were obtained by mechanical peeling or chemical exfoliation techniques and electrically contacted using electron-beam lithography. The MoS2 devices showed high field-effect mobility in the tens of cm(2)/Vs and an on/off ratio higher than 10(5). The TaS2 devices remained metallic despite the fabrication process and showed an enhancement of the superconducting transition temperature and disappearance of the charge density wave phase anomaly at low temperature. (c) 2007 American Institute of Physics.
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