A red europium (III) ternary complex for InGaN-based light-emitting diode

被引：7
|
作者：
Wang, Zhengliang [1 ,2 ]
Xiang, Nengjun [2 ]
Wang, Qin [1 ,2 ]
Zhang, Guangqiu [1 ]
Gong, Menglian [2 ]
机构：
[1] Yunnan Nationalities Univ, Sch Chem & Biotechnol, Kunming 650031, Yunnan, Peoples R China
[2] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Sch Chem & Chem Engn, Guangzhou 510275, Guangdong, Peoples R China
来源：
JOURNAL OF LUMINESCENCE | 2010年 / 130卷 / 01期
关键词：
Europium (III) ternary complex; Thermogravimetric analysis; Chemical synthesis; Luminescence; Light-emitting diode; PHOSPHOR; LUMINESCENCE;
D O I：
10.1016/j.jlumin.2009.07.011
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
One kind of europium (III) ternary complex was synthesized, and its photoluminescence properties were investigated. This complex exhibits broad excitation band in near-UV range, and strong red emission which is due to the D-5(0)-F-7(j) transitions of Eu3+ ions. The luminescence quantum yield for the Eu3+ complex is 0.17. Thermogravimetric analysis confirms a high thermal stability of the complex with a decomposition temperature of 344 degrees C. All the characteristics indicate that the Eu3+ complex is a highly efficient red phosphor suitable to be excited by near UV light. An intense red light-emitting diode was fabricated by combining the europium (III) ternary complex with a similar to 395 nm-emitting InGaN chip. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：35 / 37
页数：3
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