Si nanocrystal p-i-n diodes fabricated on quartz substrates for third generation solar cell applications

被引：108

作者：

Perez-Wurfl, Ivan ^{[1
]}

Hao, Xiaojing ^{[1
]}

Gentle, Angus ^{[1
]}

Kim, Dong-Ho ^{[2
]}

Conibeer, Gavin ^{[1
]}

Green, Martin. A. ^{[1
]}

机构：

[1] Univ New S Wales, Sydney, NSW 2052, Australia

[2] KIMS, Funct Coatings Res Grp, Chang Won 641831, Gyeongnam, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 15期

基金：

澳大利亚研究理事会;

关键词：

MODEL;

D O I：

10.1063/1.3240882

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated p-i-n diodes by sputtering alternating layers of silicon dioxide and silicon rich oxide with a nominal atomic ratio O/Si=0.7 onto quartz substrates with in situ boron for p-type and phosphorus for n-type doping. After crystallization, dark and illuminated I-V characteristics show a diode behavior with an open circuit voltage of 373 mV. Due to the thinness of the layers and their corresponding high resistivity, lateral current flow results in severe current crowding. This effect is taken into account when extracting the electronic bandgap based on temperature dependent diode I-V measurements. (C) 2009 American Institute of Physics. [doi:10.1063/1.3240882]

引用

页数：3

共 9 条

[1] Transient terahertz conductivity in photoexcited silicon nanocrystal films [J].