Preparation and infrared response properties of vanadium dioxide nanowire/carbon nanotube composite film

被引:13
作者
Fu, Wen Biao [1 ,2 ,3 ]
Ma, He [4 ,5 ]
Wei, Yang [4 ,5 ]
Jiang, Kaili [4 ,5 ]
Fei, Guang Tao [1 ,2 ]
Zhang, Li De [1 ,2 ]
机构
[1] Chinese Acad Sci, Key Lab Mat Phys, Inst Solid State Phys, Hefei Inst Phys Sci, Hefei 230031, Peoples R China
[2] Chinese Acad Sci, Anhui Key Lab Nanomat & Nanotechnol, Inst Solid State Phys, Hefei Inst Phys Sci, Hefei 230031, Peoples R China
[3] Univ Sci & Technol China, Hefei 230026, Peoples R China
[4] Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Dept Phys, Beijing 100084, Peoples R China
[5] Tsinghua Univ, Tsinghua Foxconn Nanotechnol Res Ctr, Beijing 100084, Peoples R China
基金
中国国家自然科学基金;
关键词
MOS2; PHOTOTRANSISTORS; THIN-FILMS; PHOTODETECTORS; DETECTORS; GRAPHENE; OXIDE; CONDUCTIVITY; ULTRAVIOLET; RADIATION;
D O I
10.1007/s10853-017-0959-z
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A new composite thin film of vanadium dioxide (VO2) nanowire/carbon nanotube (CNT) has been prepared by a hydrothermal method. The VO2 nanowires were covered on the whole upper surfaces of CNT and combined very well with the CNT film. XRD and Raman spectra revealed that the as-synthesized composite film had good crystallization. The film presented favorable photoelectric response at the room temperature due to the excellent thermal conductivity of CNT film and their large effective illumination area. The obtained results revealed that photocurrent showed a strong dependence on the bias voltage and incident infrared light intensity. Furthermore, the infrared photoelectric response exhibited an obvious enhancement with decreasing the thickness of the VO2 films. The responsivity (R (lambda) ) can reach up to 17.83 mA/W for the film thickness of 25 mu m, and the rise and decay time are about 0.84 and 0.56 s, respectively.
引用
收藏
页码:7224 / 7231
页数:8
相关论文
共 29 条
[21]   Design of vanadium oxide structures with controllable electrical properties for energy applications [J].
Wu, Changzheng ;
Feng, Feng ;
Xie, Yi .
CHEMICAL SOCIETY REVIEWS, 2013, 42 (12) :5157-5183
[22]   Ultrahigh Responsivity and External Quantum Efficiency of an Ultraviolet-Light Photodetector Based on a Single VO2 Microwire [J].
Wu, Jyh Ming ;
Chang, Wei En .
ACS APPLIED MATERIALS & INTERFACES, 2014, 6 (16) :14286-14292
[23]   Room temperature photo-induced phase transitions of VO2 nanodevices [J].
Wu, Jyh Ming ;
Liou, Lian Bang .
JOURNAL OF MATERIALS CHEMISTRY, 2011, 21 (14) :5499-5504
[24]   Depressed transition temperature of WxV1-xO2: mechanistic insights from the X-ray absorption fine structure (XAFS) spectroscopy [J].
Wu, Yanfei ;
Fan, Lele ;
Huang, Weifeng ;
Chen, Shuangming ;
Chen, Shi ;
Chen, Feihu ;
Zou, Chongwen ;
Wu, Ziyu .
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2014, 16 (33) :17705-17714
[25]  
Xia FN, 2009, NAT NANOTECHNOL, V4, P839, DOI [10.1038/nnano.2009.292, 10.1038/NNANO.2009.292]
[26]   Fast Adaptive Thermal Camouflage Based on Flexible VO2/Graphene/CNT Thin Films [J].
Xiao, Lin ;
Ma, He ;
Liu, Junku ;
Zhao, Wei ;
Jia, Yi ;
Zhao, Qiang ;
Liu, Kai ;
Wu, Yang ;
Wei, Yang ;
Fan, Shoushan ;
Jiang, Kaili .
NANO LETTERS, 2015, 15 (12) :8365-8370
[27]   Ultrafast terahertz modulation characteristic of tungsten doped vanadium dioxide nanogranular film revealed by time-resolved terahertz spectroscopy [J].
Xiao, Yang ;
Zhai, Zhao-Hui ;
Shi, Qi-Wu ;
Zhu, Li-Guo ;
Li, Jun ;
Huang, Wan-Xia ;
Yue, Fang ;
Hu, Yan-Yan ;
Peng, Qi-Xian ;
Li, Ze-Ren .
APPLIED PHYSICS LETTERS, 2015, 107 (03)
[28]   Single-Layer MoS2 Phototransistors [J].
Yin, Zongyou ;
Li, Hai ;
Li, Hong ;
Jiang, Lin ;
Shi, Yumeng ;
Sun, Yinghui ;
Lu, Gang ;
Zhang, Qing ;
Chen, Xiaodong ;
Zhang, Hua .
ACS NANO, 2012, 6 (01) :74-80
[29]   The structural and electronic properties of amorphous HgCdTe from first-principles calculations [J].
Zhao, Huxian ;
Chen, Xiaoshuang ;
Lu, Jianping ;
Shu, Haibo ;
Lu, Wei .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 47 (02)