A CMOS Image Sensor With In-Pixel Buried-Channel Source Follower and Optimized Row Selector

被引：44

作者：

Chen, Yue ^{[1
]}

Wang, Xinyang ^{[1
]}

Mierop, Adri J. ^{[2
]}

Theuwissen, Albert J. P. ^{[1
,3
]}

机构：

[1] Delft Univ Technol, Elect Instrumentat Lab, NL-2628 CD Delft, Netherlands

[2] DALSA Semicond, NL-5656 AE Eindhoven, Netherlands

[3] Harvest Imaging, B-3960 Bree, Belgium

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2009年 / 56卷 / 11期

关键词：

Buried-channel source follower (BSF); CMOS image sensor (CIS); optimized row selector; random-telegraph-signal (RTS) noise; 4T-active-pixel sensor;

D O I：

10.1109/TED.2009.2030600

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a CMOS imager sensor with pinned-photodiode 4T active pixels which use in-pixel buried-channel source followers (SFs) and optimized row selectors. The test sensor has been fabricated in a 0.18-mu m CMOS process. The sensor characterization was carried out successfully, and the results show that, compared with a regular imager with the standard nMOS transistor surface-mode SF, the new pixel structure reduces dark random noise by 50% and improves the output swing by almost 100% without any conflicts to the signal readout operation of the pixels. Furthermore, the new pixel structure is able to drastically minimize in-pixel random-telegraph-signal noise.

引用

页码：2390 / 2397

页数：8