Hierarchically porous hydrangea-like In2S3/In2O3 heterostructures for enhanced photocatalytic hydrogen evolution

被引:72
作者
Liu, Manli [1 ,2 ]
Li, Pan [1 ,2 ,3 ]
Wang, Shuaijun [4 ,5 ]
Liu, Yingmin [3 ]
Zhang, Jinqiang [4 ]
Chen, Lin [5 ]
Wang, Junmei [3 ]
Liu, Yushan [1 ,2 ]
Shen, Qi [1 ,2 ]
Qu, Peng [3 ]
Sun, Hongqi [4 ]
机构
[1] Zhengzhou Univ, Green Catalysis Ctr, Zhengzhou 450001, Peoples R China
[2] Zhengzhou Univ, Coll Chem, Zhengzhou 450001, Peoples R China
[3] Shangqiu Normal Univ, Sch Chem & Chem Engn, Henan Engn Ctr New Energy Battery Mat, Henan D&A Engn Ctr Adv Battery Mat, Shangqiu 476000, Henan, Peoples R China
[4] Edith Cowan Univ, Sch Engn, 270 Joondalup Dr, Joondalup, WA 6027, Australia
[5] China Univ Petr East China, State Key Lab Petr Pollut Control, Qingdao 266580, Peoples R China
基金
中国国家自然科学基金;
关键词
Hierarchically porous heterostructures; In2S3/In2O3; Photocatalytic hydrogen evolution; Charge separation;
D O I
10.1016/j.jcis.2020.11.048
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Semiconductor-based photocatalytic hydrogen evolution is considered to be a promising and costeffective approach to address the environmental issues and energy crisis. It still remains a great challenge to design highly-efficient semiconductor photocatalysts via a facile method. Herein, hierarchically porous hydrangea-like In2S3/In2O3 heterostructures are successfully synthesized via a simple in situ oxidization process. The formed In2S3/In2O3 heterostructures exhibit superior photocatalytic activity to the counterpart In2S3 and In2O3. The boosted photocatalytic performance is ascribed to the formed heterostructures, which greatly facilitate the interfacial charge transfer. Moreover, the formation of hierarchically porous heterostructures increases the number of active sites and improves the permeability, and thus significantly promotes the photocatalytic H-2 evolution activity. This work may provide a new insight for designing In2S3-based heterostructures for efficient solar light conversion. (C) 2020 Elsevier Inc. All rights reserved.
引用
收藏
页码:876 / 882
页数:7
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