Ultrafast Carrier Transport in Silicon Nanocrystal Superlattices

被引：0

作者：

Nemec, H. ^{[1
]}

Kuzel, P. ^{[1
]}

Maly, P. ^{[2
]}

Hiller, D. ^{[3
]}

Gutsch, S. ^{[3
]}

机构：

[1] Acad Sci Czech Republic, Inst Phys, Na Slovance 2, Prague 18221, Czech Republic

[2] Charles Univ Prague, Fac Math & Phys, CR-12116 Prague 2, Czech Republic

[3] Univ Freiburg, IMTEK Fac Engn, Freiburg, Germany

来源：

2015 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2015年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Time-resolved terahertz spectroscopy is employed to study silicon nanocrystals prepared by thermal decomposition of silicon-rich SiOx layers. We observe that higher silicon content favors formation of larger silicon clusters with short-range percolation.

引用

页数：2

共 4 条

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