Atomically Thin MoS2: A Versatile Nongraphene 2D Material

被引:240
|
作者
Subbaiah, Y. P. Venkata [1 ]
Saji, K. J. [1 ]
Tiwari, A. [1 ]
机构
[1] Univ Utah, Dept Mat Sci & Engn, Nanostruct Mat Res Lab, Salt Lake City, UT 84112 USA
基金
美国国家科学基金会;
关键词
2D materials; molybdenum sulfide; transition metal dichalcogenides; van der Waals solids; MoS2; FEW-LAYER MOS2; FIELD-EFFECT TRANSISTORS; LARGE CURRENT MODULATION; LARGE-AREA SYNTHESIS; VAPOR-PHASE GROWTH; MONOLAYER MOS2; RAMAN-SCATTERING; PHOTOCURRENT GENERATION; THERMAL-DECOMPOSITION; VALLEY POLARIZATION;
D O I
10.1002/adfm.201504202
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Two-dimensional inorganic materials are emerging as a premiere class of materials for fabricating modern electronic devices. The interest in 2D layered transition metal dichalcogenides is especially high. Particularly, 2D MoS2 is being heavily researched due to its novel functionalities and its suitability for a wide range of electronic and optoelectronic applications. In this article, the progress in mono/few layer(s) MoS2 research is reviewed by focusing primarily on the layer dependent evolution of crystal, phonon, and electronic structure. The review includes extensive detail into the methodologies adapted for single or few layer(s) MoS2 growth. Further, the review covers the versatility of 2D MoS2 for a broad range of device applications. Recent advancements in the field of van der Waals heterostructures are also highlighted at the end of the review.
引用
收藏
页码:2046 / 2069
页数:24
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