Above-bandgap ordinary optical properties of GaSe single crystal

被引：37

作者：

Choi, S. G. ^{[1
]}

Levi, D. H. ^{[1
]}

Martinez-Tomas, C. ^{[2
]}

Munoz Sanjose, V. ^{[2
]}

机构：

[1] Natl Renewable Energy Lab, Natl Ctr Photovolta, Golden, CO 80007 USA

[2] Univ Valencia, Dept Fis Aplicada & Electromagnetismo, E-46100 Burjassot, Spain

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 05期

关键词：

critical points; dielectric function; ellipsometry; energy gap; gallium compounds; III-VI semiconductors; refractive index; GALLIUM SELENIDE; INTERBAND-TRANSITIONS; INDIUM SELENIDE; INSE; VI; DIFFERENTIATION; NONLINEARITIES; SEMICONDUCTORS; REFLECTIVITY; MODULATION;

D O I：

10.1063/1.3211967

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report above-bandgap ordinary optical properties of epsilon-phase GaSe single crystal. Reference-quality pseudodielectric function <<epsilon(E)>>=<<epsilon(1)(E)>>+i <<epsilon(2)(E)>> and pseudorefractive index << N(E)>>=<< n(E)>>+i << k(E)>> spectra were measured by spectroscopic ellipsometry from 0.73 to 6.45 eV at room temperature for the light polarization perpendicular to the optic axis (E perpendicular to c). The <<epsilon >> spectrum exhibited several interband-transition critical-point structures. Analysis of second-energy derivatives calculated numerically from the measured data yielded the critical-point energy values.

引用

页数：4

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