Ferroelectric phase transitions of the 0.32PIN-0.345PMN-0.335PT single crystals studied by temperature-dependent Raman spectroscopy, dielectric and ferroelectric performance

被引:11
|
作者
Zhu, Rongfeng [1 ]
Yang, Li [1 ]
Fang, Bijun [1 ]
Ding, Jianning [1 ,2 ]
Zhao, Xiangyong [3 ]
Luo, Haosu [3 ]
机构
[1] Changzhou Univ, Sch Mat Sci & Engn, Jiangsu Collaborat Innovat Ctr Photovolat Sci & E, Changzhou, Peoples R China
[2] Jiangsu Univ, Sch Mat Sci & Engn, Zhenjiang, Peoples R China
[3] Chinese Acad Sci, Key Lab Inorgan Funct Mat & Device, Shanghai, Peoples R China
关键词
PIN-PMN-PT single crystals; ferroelectric phase transition; Raman spectroscopy; electrical properties; ELECTROMECHANICAL RESPONSE; POLARIZATION ROTATION; MONOCLINIC PHASE; SCATTERING; STRAIN;
D O I
10.1080/01411594.2016.1227987
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The ferroelectric phase transition characteristics of the 0.32Pb(In1/2Nb1/2)O-3-0.345Pb(Mg1/3Nb2/3)O-3-0.335PbTiO(3) (0.32PIN-0.345PMN-0.335PT) single crystals were studied by the temperature-dependent Raman spectroscopy and some electrical properties. Ferroelectric monoclinic phase was confirmed at room temperature by the numbers of the Raman modes. Successive ferroelectric phase transitions, i.e. ferroelectric monoclinic phase to ferroelectric tetragonal phase transition (FEM-FET) and ferroelectric tetragonal phase to paraelectric cubic phase transition (FET-P-C), are evidenced by the anomalies of Raman modes line width, peaks intensity and their ratios around TM-T and T-C/T-m temperatures. The temperature dependent permittivity derivative = dE/dT not only provides further evidence of the successive ferroelectric phase transitions, but also demonstrates the second-order transition characteristic of the FEM-FET phase transition and the first-order transition feature of the FET-P-C phase transition. The FEM-FET phase transition is also confirmed by the abnormal narrowing of the P-E loops, decrease of the P-r and E-c values, and extremums of the pyroelectric performance.
引用
收藏
页码:500 / 508
页数:9
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