Constrained Optimization of CMOS Analog Circuits via All-Inversion Region MOS Model

被引:0
作者
Goswami, Magnanil [1 ]
Kundu, Sudakshina [1 ]
机构
[1] West Bengal Univ Technol, Dept CSE & IT, Kolkata, India
来源
COMPUTATIONAL ADVANCEMENT IN COMMUNICATION CIRCUITS AND SYSTEMS, ICCACCS 2014 | 2015年 / 335卷
关键词
All-inversion region MOS model; Analog integrated circuit; Design constraint; Orthogonal-convex optimization; TRANSISTOR MODEL; OP-AMP; DESIGN;
D O I
10.1007/978-81-322-2274-3_44
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
In this paper we furnish a novel approach of design automation and optimization of CMOS analog integrated circuits. This method offers an effective amalgamation between the principles of orthogonal-convex optimization and the all-inversion region MOS transistor model. We have observed that the constituting equations of the all-inversion region MOS model share great resemblance with the standard representation of orthogonal-convex functions. Therefore, these design equations, emerging from various device and circuit specifications can be modelled as the constraints of an orthogonal-convex optimization problem and can be evaluated automatically to ensure a globally optimal solution over a range of design scenarios. Additionally, there is a provision for design feasibility analysis with this semi-empirical approach.
引用
收藏
页码:395 / 405
页数:11
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