Growth and Properties of Electrodeposited Transparent Al-doped ZnO Nanostructures

被引:11
作者
Baka, O. [1 ]
Mentar, L. [1 ]
Khelladi, M. R. [1 ]
Azizi, A. [1 ]
机构
[1] Univ Ferhat Abbas Setif 1, Ingn Mol & Nanostruct, Chim Lab, Setif 19000, Algeria
关键词
ZnO: Al nanostructures; Conductivity measurements; Crystal structure; Semiconductors; Doping; THIN-FILMS; DEPOSITION; SEMICONDUCTORS; ZINC;
D O I
10.3938/jkps.67.2011
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Al-doped zinc oxide (AZO) nanostructures were fabricated on fluorine-doped tin-oxide (FTO)-coated glass substrates by using electrodeposition. The effects of the doping concentration of Al on the morphological, microstructural, electrical and optical properties of the nanostructures were investigated. From the field emission scanning electron microscopy (FE-SEM) observation, when the amount of Al was increased in the solution, the grains size was observed to decreases. The observed changes in the morphology indicate that Al acts as nucleation centers in the vacancy sites of ZnO and destroys the crystalline structure at high doping level. Effectively, the X-ray diffraction (XRD) analysis indicated that the undoped and the doped ZnO nanostructures has a polycrystalline nature and a hexagonal wurtzite structure with a (002) preferential orientation. The photoluminescence (PL) room-temperature measurements showed that the incorporation of Al in the Zn lattice can improve the intensity of ultraviolet (UV) emission, thus suggesting its greater prospects for use in UV optoelectronic devices.
引用
收藏
页码:L2011 / L2014
页数:4
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