Effects of AlN/GaN Superlattices on the Structural Properties of Al0.45Ga0.55N Grown on AlN/Sapphire Templates

被引：0
|
作者：
Fu, Q. M. [1 ]
Peng, T.
Pan, Y.
Liu, C.
机构：
[1] Wuhan Univ, Key Lab Acoust & Photen Mat & Devices, Minist Educ, Wuhan 430072, Peoples R China
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2009年 / 55卷 / 06期
关键词：
AlGaN; Molecular beam epitaxy; Strain; Superlattice; LIGHT-EMITTING-DIODES; MW;
D O I：
10.3938/jkps.55.2659
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Crack-free Al0.45Ga0.55N epilayers with and without AlN/GaN superlattices were grown on AlN/sapphire templates by using radio-frequency-assisted molecular beam epitaxy. The effects of the AlN/GaN superlattices on the structural properties of the Al0.45Ga0.55N epilayers were studied. A reduction of screw dislocations was achieved in Al0.45Ga0.55N epilayers by using AlN/GaN superlattices. Transmission electron microscopy and Raman spectroscopy analyses revealed that the compressive strain of Al0.45Ga0.55N epilayers was effectively relaxed through the inclination of edge threading-dislocations.
引用
收藏
页码：2659 / 2661
页数：3
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