39.5-GHz 0.2-μm PHEMT 2:1 dynamic frequency divider

A 39.5GHz 2:1 dynamic frequency divider Integrated circuit (IC) has been realized in a 0.2-mu m gate-length AlGaAs/GaAs Pseudomorphic high electron mobility transistor (PHEMT) technology with an f(T) of about 60GHz. Coplanar waveguides (CPW) were used as inductors to achieve broadband input impedance match and high integration. A push-pull active source-follower was applied to broaden the circuit bandwidth without consuming additional power. The single-ended inputs and differential outputs benefit many applications. The divider IC can operate at the highest frequency of 39.5GHz with single-ended input clock via on-wafer testing. The measured spot phase noise of the 19.75GHz output signal is -100.17dBc/Hz at a frequency offset of 10K. The chip size is 1.0 x 0.7mm(2) and the power dissipation is 400mW under a -3.3V supply.