Silicon single crystals ion-doped with ytterbium

被引：2

作者：

Nazyrov, DÉ ^{[1
]}

Goncharov, SA

Suvorov, AV

机构：

[1] Tashkent State Univ, Tashkent, Uzbekistan

[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 196140, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2000年 / 26卷 / 04期

关键词：

Radiation; Silicon; Radiation Damage; Ytterbium; Silicon Single Crystal;

D O I：

10.1134/1.1262832

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The postimplantation distribution of defects and dopant atoms in silicon samples ion-implanted with the rare-earth element ytterbium was studied for the first time. The radiation damage profile coincides with the profile of implanted ytterbium. (C) 2000 MAIK "Nauka/Interperiodica".

引用

页码：326 / 327

页数：2