Magnetization switching using topological surface states

被引:70
作者
Li, Peng [1 ]
Kally, James [2 ]
Zhang, Steven S. -L. [3 ]
Pillsbury, Timothy [2 ]
Ding, Jinjun [1 ]
Csaba, Gyorgy [4 ]
Ding, Junjia [3 ]
Jiang, J. S. [3 ]
Liu, Yunzhi [5 ]
Sinclair, Robert [5 ]
Bi, Chong [6 ]
DeMann, August [1 ]
Rimal, Gaurab [7 ,9 ]
Zhang, Wei [3 ,8 ]
Field, Stuart B. [1 ]
Tang, Jinke [7 ]
Wang, Weigang [6 ]
Heinonen, Olle G. [3 ]
Novosad, Valentine [3 ]
Hoffmann, Axel [3 ]
Samarth, Nitin [2 ]
Wu, Mingzhong [1 ]
机构
[1] Colorado State Univ, Dept Phys, Ft Collins, CO 80523 USA
[2] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
[3] Argonne Natl Lab, Mat Sci Div, Lemont, IL 60439 USA
[4] Pazmany Peter Catholic Univ, Fac Informat Technol & Bion, Budapest, Hungary
[5] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
[6] Univ Arizona, Dept Phys, Tucson, AZ 85721 USA
[7] Univ Wyoming, Dept Phys & Astron, Laramie, WY 82071 USA
[8] Oakland Univ, Dept Phys, Rochester, MI 48309 USA
[9] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA
基金
美国国家科学基金会;
关键词
INSULATOR; TORQUE;
D O I
10.1126/sciadv.aaw3415
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Topological surface states (TSSs) in a topological insulator are expected to be able to produce a spin-orbit torque that can switch a neighboring ferromagnet. This effect may be absent if the ferromagnet is conductive because it can completely suppress the TSSs, but it should be present if the ferromagnet is insulating. This study reports TSS-induced switching in a bilayer consisting of a topological insulator Bi2Se3 and an insulating ferromagnet BaFe12O19. A charge current in Bi2Se3 can switch the magnetization in BaFe12O19 up and down. When the magnetization is switched by a field, a current in Bi2Se3 can reduce the switching field by similar to 4000 Oe. The switching efficiency at 3 K is 300 times higher than at room temperature; it is similar to 30 times higher than in Pt/BaFe12O19. These strong effects originate from the presence of more pronounced TSSs at low temperatures due to enhanced surface conductivity and reduced bulk conductivity.
引用
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页数:8
相关论文
共 40 条
[1]  
[Anonymous], APPL PHYS LETT
[2]   Thickness-Independent Transport Channels in Topological Insulator Bi2Se3 Thin Films [J].
Bansal, Namrata ;
Kim, Yong Seung ;
Brahlek, Matthew ;
Edrey, Eliav ;
Oh, Seongshik .
PHYSICAL REVIEW LETTERS, 2012, 109 (11)
[3]   Magnetoelectricity in multiferroic hexaferrites as understood by crystal symmetry analyses [J].
Chai, Yi Sheng ;
Chun, Sae Hwan ;
Cong, Jun Zhuang ;
Kim, Kee Hoon .
PHYSICAL REVIEW B, 2018, 98 (10)
[4]   Gate-Voltage Control of Chemical Potential and Weak Antilocalization in Bi2Se3 [J].
Chen, J. ;
Qin, H. J. ;
Yang, F. ;
Liu, J. ;
Guan, T. ;
Qu, F. M. ;
Zhang, G. H. ;
Shi, J. R. ;
Xie, X. C. ;
Yang, C. L. ;
Wu, K. H. ;
Li, Y. Q. ;
Lu, L. .
PHYSICAL REVIEW LETTERS, 2010, 105 (17)
[5]   Theory of spin Hall magnetoresistance [J].
Chen, Yan-Ting ;
Takahashi, Saburo ;
Nakayama, Hiroyasu ;
Althammer, Matthias ;
Goennenwein, Sebastian T. B. ;
Saitoh, Eiji ;
Bauer, Gerrit E. W. .
PHYSICAL REVIEW B, 2013, 87 (14)
[6]   Nanowire spin torque oscillator driven by spin orbit torques [J].
Duan, Zheng ;
Smith, Andrew ;
Yang, Liu ;
Youngblood, Brian ;
Lindner, Juergen ;
Demidov, Vladislav E. ;
Demokritov, Sergej O. ;
Krivorotov, Ilya N. .
NATURE COMMUNICATIONS, 2014, 5
[7]  
Emori S, 2013, NAT MATER, V12, P611, DOI [10.1038/NMAT3675, 10.1038/nmat3675]
[8]  
Fan YB, 2014, NAT MATER, V13, P699, DOI [10.1038/NMAT3973, 10.1038/nmat3973]
[9]  
Grahn H.T., 2001, Introduction to Semiconductor Physics
[10]   Room-Temperature Spin-Orbit Torque Switching Induced by a Topological Insulator [J].
Han, Jiahao ;
Richardella, A. ;
Siddiqui, Saima A. ;
Finley, Joseph ;
Samarth, N. ;
Liu, Luqiao .
PHYSICAL REVIEW LETTERS, 2017, 119 (07)