Influence of grating parameters on the linewidths of external-cavity diode lasers

被引:29
作者
Loh, Huanqian
Lin, Yu-Ju
Teper, Igor
Cetina, Marko
Simon, Jonathan
Thompson, James K.
Vuletic, Madan
机构
[1] MIT, MIT Harvard Ctr Ultracold Atoms, Dept Phys, Cambridge, MA 02139 USA
[2] MIT, Elect Res Lab, Cambridge, MA 02139 USA
[3] Harvard Univ, MIT Harvard Ctr Ultracold Atoms, Dept Phys, Cambridge, MA 02138 USA
关键词
D O I
10.1364/AO.45.009191
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We investigate experimentally the influence of the grating reflectivity, grating resolution, and diode facet antireflection (AR) coating on the intrinsic linewidth of an external-cavity diode laser built with a diffraction grating in a Littrow configuration. Grating lasers at 399, 780, and 852 nm are determined to have typical linewidths between 250 and 600 kHz from measurements of their frequency noise power spectral densities. The linewidths are little affected by the presence of an AR coating on the diode facet but narrow as the grating reflectivity and grating resolution are increased, with the resolution exerting a greater effect. We also use frequency noise measurements to characterize a laser mount with improved mechanical stability.
引用
收藏
页码:9191 / 9197
页数:7
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