Thermal stability of hafnium and hafnium nitride gates on HfO2 gate dielectrics

被引：10

作者：

Tsai, Chih-Huang ^{[1
]}

Lai, Yi-Sheng ^{[2
]}

Chen, J. S. ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 70101, Taiwan

[2] Natl United Univ, Dept Mat Sci & Engn, Miaoli, Taiwan

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2009年 / 487卷 / 1-2期

关键词：

Hafnium; Hafnium nitride; Metal gates; METAL GATE; WORK FUNCTION; ELECTRICAL-PROPERTIES; ELECTRODE; CAPACITORS; LAYER; FILMS; CMOS; SIO2; HFN;

D O I：

10.1016/j.jallcom.2009.08.040

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The dependence of the material and electrical properties of HfNx films on the nitrogen flow ratio has been investigated in this work. After annealing at 400 degrees C in the forming gas, the sputtered Hf thin film oxidizes, but the composition of the sputtered HfN1.0 and HfN1.3 thin films remains unchanged. In the case of the Hf/HfO2/Si structure, it is found that (1) oxygen diffuses from the film surface to the silicon substrate, and (2) oxygen is incorporated into the bulk of the Hf film by reduction of the underlying HfO2 film, after annealing at 400 degrees C. The results suggest that HfN1.3 is a poorer oxygen diffusion barrier than HfN1.0, and reveal that HfN1.0/HfO2/Si MOS capacitors possess better thermal stability than Hf/HfO2/Si and HfN1.3/HfO2/Si capacitors. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：687 / 692

页数：6

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