An original approach for the fabrication of Si/SiO2 multilayers using reactive magnetron sputtering

被引:72
|
作者
Ternon, C [1 ]
Gourbilleau, F [1 ]
Portier, X [1 ]
Voivenel, P [1 ]
Dufour, C [1 ]
机构
[1] ISMRA Univ Caen, LERMAT, FRE CNRS 2149, F-14050 Caen, France
关键词
Si/SiO2; multilayers sputtering; photoluminescence;
D O I
10.1016/S0040-6090(02)00294-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Composite and multilayered Si/SiO2 structures have been grown by means of reactive magnetron sputtering of a pure silica target. This method is based on the different nature of the plasma during deposition: the plasma consists of either pure argon or an argon/hydrogen mixture for the growth of silica or Si-rich films, respectively. Using this process, Si-rich single layers and Si/ SiO2 multilayer structures have been successfully elaborated and characterised by infrared absorption spectroscopy, optical transmission measurements and transmission electron microscopy (conventional and high resolution). The superlattices have shown a significant photoluminescence signal whose energy is governed by the Si sublayer thickness. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:5 / 10
页数:6
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