Low temperature growth of Si nanowires via vapour-liquid-solid mechanism

被引:0
作者
Ng, I. -K. [1 ]
Suzuki, H. [2 ]
机构
[1] Agensi Nuklear Malaysia, Kajang 43000, Selangor, Malaysia
[2] NIMS, Tsukuba, Ibaraki 3050047, Japan
关键词
Si nanowires; Vapour-liquid-solid; Chemical vapour deposition;
D O I
10.1179/143307509X437590
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A set of Si nanowires (NWs) was synthesised by chemical vapour deposition using Si supported Au nanoclusters as catalyst and disilane reactant in hydrogen as the vapour phase precursor. The growth temperature and pressure were systematically varied to achieve various growth stages in order to study the effects of growth conditions on the morphology and microstructure of the NWs. The microstructure, morphology, crystallography and chemistry of the NWs were characterised using various imaging, diffraction and probe based techniques. Long NWs of high aspect ratios, good crystallinity and morphology were generally obtained at relatively low growth temperature and moderate growth pressure of 400 degrees C and 1.0 torr respectively. The wires were several micormetres long with an average diameter range of approximately 10 to 30 nm. Higher growth pressures tend to promote branching and kinking. The vapour-liquid-solid growth mechanism is discussed in the context of the experimental conditions used here.
引用
收藏
页码:192 / 195
页数:4
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