La-doped effect on the ferroelectric properties of Bi4Ti3O12-SrBi4Ti4O15 thin film fabricated by pulsed laser deposition

被引：30

作者：

Zhu, JS ^{[1
]}

Su, D

Lu, XM

Qin, HX

Wang, YN

Wang, DY

Chan, HLW

Wong, KH

Choy, CL

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[2] Hong Kong Polytech Inst, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China

[3] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 92卷 / 09期

关键词：

D O I：

10.1063/1.1510557

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bi4Ti3O12-SrBi4Ti4O15 (BT-SBTi) thin film was fabricated successfully on Pt/TiO2/SiO2/Si(110) substrates by the pulsed laser deposition technique. Films annealed at 650 degreesC by the rapid temperature process (RTP) have P-r=12 muC/cm(2). But, the fatigue behavior has been observed although no obvious decrease in P-r up to 10(5) s retained time in the BT-SBTi capacitor. After being La doped, the Bi3.25La0.75Ti3O12-SrBi4Ti4O15 (BLT-SBTi) has fatigue free properties. P-r=13.5 muC/cm(2) was measured in a BLT-SBTi film of 300 nm thickness. It did not show any significant fatigue up to 10(10) switching cycles above the applied field of 250 kV/cm. It also has good retention properties. The field dependence of fatigue behavior and La-doped effect are discussed. (C) 2002 American Institute of Physics.

引用

页码：5420 / 5424

页数：5

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