Preparation and Characterization of Octadecanethiol Self-Assembled Monolayers on Indium Arsenide (100)

被引:24
作者
Knoben, Wout [1 ]
Brongersma, Sywert H. [1 ]
Crego-Calama, Mercedes [1 ]
机构
[1] Holst Ctr IMEC, NL-5656 AE Eindhoven, Netherlands
关键词
RAY PHOTOELECTRON-SPECTROSCOPY; BARE SEMICONDUCTOR SURFACES; ORGANIZED MOLECULAR ASSEMBLIES; ATTENUATED TOTAL-REFLECTION; SULFUR-PASSIVATED INAS; ELECTRONIC-PROPERTIES; INP SURFACES; GAAS; GOLD; SI;
D O I
10.1021/jp9069543
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Self-assembled monolayers (SAMs) of octadecanethiol (ODT) on InAs(100) were prepared and characterized in detail. The native oxide of InAs was removed by a wet chemical etching method which allows formation of ODT SAMs on bare InAs(100) without any exposure to the ambient atmosphere. Contact angle measurement, ellipsometry, Fourier transform infrared spectroscopy, and atomic force microscopy show that the resulting SAMs are smooth, continuous, and, well ordered. X-ray photoelectron spectroscopy confirm bonding, of ODT to the substrate as thlolate. When InAs-ODT is exposed to the ambient atmosphere, some reoxidation of the substrate. takes place Thermal stability studies demonstrate that ODT SAMs ire completely stable up to 140 degrees C, Decomposition of ODT occurs above 250 degrees C.
引用
收藏
页码:18331 / 18340
页数:10
相关论文
共 63 条
[1]   SPONTANEOUSLY ORGANIZED MOLECULAR ASSEMBLIES .2. QUANTITATIVE INFRARED SPECTROSCOPIC DETERMINATION OF EQUILIBRIUM STRUCTURES OF SOLUTION-ADSORBED NORMAL-ALKANOIC ACIDS ON AN OXIDIZED ALUMINUM SURFACE [J].
ALLARA, DL ;
NUZZO, RG .
LANGMUIR, 1985, 1 (01) :52-66
[2]   Molecular engineering of semiconductor surfaces and devices [J].
Ashkenasy, G ;
Cahen, D ;
Cohen, R ;
Shanzer, A ;
Vilan, A .
ACCOUNTS OF CHEMICAL RESEARCH, 2002, 35 (02) :121-128
[3]   DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1983, 27 (02) :985-1009
[4]   Self assembled monolayers on silicon for molecular electronics [J].
Aswal, D. K. ;
Lenfant, S. ;
Guerin, D. ;
Yakhmi, J. V. ;
Vuillaume, D. .
ANALYTICA CHIMICA ACTA, 2006, 568 (1-2) :84-108
[5]   Chemical functionalization of GaN and AlN surfaces [J].
Baur, B ;
Steinhoff, G ;
Hernando, J ;
Purrucker, O ;
Tanaka, M ;
Nickel, B ;
Stutzmann, M ;
Eickhoff, M .
APPLIED PHYSICS LETTERS, 2005, 87 (26) :1-3
[6]   Heads or tails: Which is more important in molecular self-assembly? [J].
Bent, Stacey F. .
ACS NANO, 2007, 1 (01) :10-12
[7]   Chalcogenide passivation of III-V semiconductor surfaces [J].
Bessolov, VN ;
Lebedev, MV .
SEMICONDUCTORS, 1998, 32 (11) :1141-1156
[8]   A new approach to the IR spectroscopic study of molecular orientation and packing in adsorbed monolayers. Orientation and packing of long-chain primary amines and alcohols on quartz [J].
Chernyshova, IV ;
Rao, KH .
JOURNAL OF PHYSICAL CHEMISTRY B, 2001, 105 (04) :810-820
[9]   Transport Coefficients of InAs Nanowires as a Function of Diameter [J].
Dayeh, Shadi A. ;
Yu, Edward T. ;
Wang, Deli .
SMALL, 2009, 5 (01) :77-81
[10]   Progress in the room-temperature optical functions of semiconductors [J].
Djurisic, AB ;
Chan, Y ;
Li, EH .
MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2002, 38 (06) :237-293