Fabrication of nano-cavity patterned sapphire substrate using self-assembly meshed Pt thin film on c-plane sapphire substrate

被引：13

作者：

Huang, S. W. ^{[1
]}

Chang, C. C. ^{[1
]}

Lin, H. Y. ^{[1
]}

Li, X. F. ^{[1
]}

Lin, Y. C. ^{[1
]}

Liu, C. Y. ^{[1
]}

机构：

[1] Natl Cent Univ, Dept Chem Engn & Mat Engn, Jhongli 32001, Taiwan

来源：

THIN SOLID FILMS | 2017年 / 628卷

关键词：

Nano-cavities; Quantum wells; Gallium nitride; Light emitting diodes; LIGHT-EMITTING-DIODES; QUANTUM-WELLS; EFFICIENCY; FIELDS;

D O I：

10.1016/j.tsf.2017.03.015

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, a nano-cavity patterned sapphire substrate (nc-PSS) is fabricated by using a self-formed meshed Pt thin film on a c-plane sapphire substrate. The light output power of a GaN-based light emitting diode on the nc-PSS is 45% greater than that of a control light emitting diode that was prepared on a flat c-plane sapphire substrate (f-SS) wafer. The GaN-based light emitting diode that was prepared on the nc-PSS exhibited much less drooping than a GaN-based light-emitting diode that was prepared on a commercial semi-sphere patterned sapphire substrate (r-PSS), mainly because the voids that formed at the cavities at the GaN/nc-PSS interface buffered the stress in the GaN epi-layers that was imposed by the sapphire substrate. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：127 / 131

页数：5

共 20 条

[1] Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures [J].

Della Sala, F ;

Di Carlo, A ;

Lugli, P ;

Bernardini, F ;

Fiorentini, V ;

Scholz, R ;

Jancu, JM .

APPLIED PHYSICS LETTERS, 1999, 74 (14) :2002-2004

[2] Metalorganic Vapor Phase Epitaxy of III-Nitride Light-Emitting Diodes on Nanopatterned AGOG Sapphire Substrate by Abbreviated Growth Mode [J].

Ee, Yik-Khoon ;

Biser, Jeffrey M. ;

Cao, Wanjun ;

Chan, Helen M. ;

Vinci, Richard P. ;

Tansu, Nelson .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2009, 15 (04) :1066-1072

[3] Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening [J].

Fujii, T ;

Gao, Y ;

Sharma, R ;

Hu, EL ;

DenBaars, SP ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 2004, 84 (06) :855-857

[4]

Haiyong G., 2008, J PHYS D, V41

[5] Performance of GaN-based light-emitting diodes fabricated using GaN epilayers grown on silicon substrates [J].

Horng, Ray-Hua ;

Wu, Bing-Rui ;

Tien, Ching-Ho ;

Ou, Sin-Liang ;

Yang, Min-Hao ;

Kuo, Hao-Chung ;

Wuu, Dong-Sing .

OPTICS EXPRESS, 2014, 22 (01) :A179-A187

[6] Stress relaxation in GaN by transfer bonding on Si substrates [J].

Hsu, S. C. ;

Pong, B. J. ;

Li, W. H. ;

Beechem, Thomas E., III ;

Graham, Samuel ;

Liu, C. Y. .

APPLIED PHYSICS LETTERS, 2007, 91 (25)

[7] Etching Three-Dimensional Pattern on Sapphire Substrate by Dynamic Self-Masking Alunogen Compound [J].

Huang, S. W. ;

Wu, Y. J. ;

Lin, H. Y. ;

Li, S. F. ;

Chen, Y. J. ;

Liu, C. Y. .

ECS SOLID STATE LETTERS, 2015, 4 (06) :R35-R38

[8] Improved AlGaN/GaN high electron mobility transistor using AlN interlayers [J].

Jiménez, A ;

Bougrioua, Z ;

Tirado, JM ;

Braña, AF ;

Calleja, E ;

Muñoz, E ;

Moerman, I .

APPLIED PHYSICS LETTERS, 2003, 82 (26) :4827-4829

[9] Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications [J].

Koike, M ;

Shibata, N ;

Kato, H ;

Takahashi, Y .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (02) :271-277

[10] Comparison of InGaN-Based LEDs Grown on Conventional Sapphire and Cone-Shape-Patterned Sapphire Substrate [J].

Lee, Jae-Hoon ;

Lee, Dong-Yul ;

Oh, Bang-Won ;

Lee, Jung-Hee .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (01) :157-163

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