Polarization of photoluminescence from strained InGaAs quantum wires on GaAs (110) substrates

被引：0
作者：
Inoue, K [1 ]
机构：
[1] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan
来源：
JOURNAL OF LUMINESCENCE | 2000年 / 87-9卷
关键词：
photoluminescence; polarization; quantum wire;
D O I：
10.1016/S0022-2313(99)00417-2
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Photoluminescence polarization of strained InGaAs quantum wires on GaAs (110) substrates is calculated by a variational method for both strain distribution and electronic wave functions. The electronic confinement, the strain, and the crystal orientation have large effects on the polarization depending on the wire thickness. The shear strain enhances the polarization especially in thick wires. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：399 / 401
页数：3
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