Switching characteristics of SiC-MOSFET and SBD power modules

被引：3

作者：

Imaizumi, M. ^{[1
]}

Tarui, Y. ^{[1
]}

Kinouchi, S. ^{[1
]}

Nakatake, H. ^{[1
]}

Nakao, Y. ^{[1
]}

Watanabe, T. ^{[1
]}

Fujihira, K. ^{[1
]}

Miura, N. ^{[1
]}

Takami, T. ^{[1
]}

Ozeki, T. ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, Adv Technol R&D Ctr, 8-1-1 Tsukaguchi Honamchi, Amagasaki, Hyogo 6618661, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2 | 2006年 / 527-529卷

关键词：

MOSFET; SBD; power module; switching characteristics; switching loss;

D O I：

10.4028/www.scientific.net/MSF.527-529.1289

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Prototype SiC power modules are fabricated using our class 10 A, 1.2 kV SiC-MOSFETs and SiC-SBDs, and their switching characteristics are evaluated using a double pulse method. Switching waveforrns show that both overshoot and tail current, which induce power losses, are suppressed markedly compared with conventional Si-lGBT modules with similar ratings. The total switching loss (MOSFET turn-ON loss, turn-OFF loss and SBD recovery loss) of SiC power modules is measured to be about 30% of that of Si-IGBT modules under the generally-used switching condition (di/dt similar to 250A/ mu s). The three losses of SiC modules decrease monotonically with a decrease in gate resistance, namely switching speed. The result shows the potential of unipolar device SiC power modules.

引用

页码：1289 / +

页数：2

共 3 条

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[3]

Ryu SH, 2005, INT SYM POW SEMICOND, P275

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