Dependence of texture development on thickness of single-annealed-layer in sol-gel derived PZT thin films

被引：24

作者：

Meng, XJ ^{[1
]}

Cheng, JG ^{[1
]}

Sun, JL ^{[1
]}

Tan, J ^{[1
]}

Ye, HJ ^{[1
]}

Chu, JH ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

来源：

THIN SOLID FILMS | 2000年 / 368卷 / 01期

基金：

中国国家自然科学基金;

关键词：

annealing; ferroelectric properties; nucleation; X-ray diffraction;

D O I：

10.1016/S0040-6090(00)00714-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

PbZr0.5Ti0.5O3 thin films have been prepared on Pt (111)/Ti/SiO2/Si substrates by a modified sol-gel technique. The PZT films were annealed layer by layer using a rapid thermal annealing (RTA) method during the spin-coating process. A novel route was used to obtain PZT films with different single-annealed-layer in thickness from the same precursor solution. It is found that the degree of (111) orientation of the films increases with the reduction thickness of single-annealed-layer. As the thickness of single-annealed-layer drops to 40 nm, the film shows a high degree of (111) preferred orientation. The decrease of single-annealed-layer thickness also leads to the increase of the remanent polarization and the dielectric constant. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：22 / 25

页数：4

共 18 条

[1] Rapid thermal processing of lead zirconate titanate thin films on Pt-GaAs substrates based on a novel 1,1,1-tris(hydroxymethyl)ethane sol-gel route [J].