共 37 条
Plasmonic WS2 Nanodiscs/Graphene van der Waals Heterostructure Photodetectors
被引:55
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Gong, Maogang
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Univ Kansas, Dept Phys & Astron, Lawrence, KS 66045 USA Univ Kansas, Dept Phys & Astron, Lawrence, KS 66045 USA

Cook, Brent
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Univ Kansas, Dept Phys & Astron, Lawrence, KS 66045 USA Univ Kansas, Dept Phys & Astron, Lawrence, KS 66045 USA

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Wu, Judy Z.
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Univ Kansas, Dept Phys & Astron, Lawrence, KS 66045 USA Univ Kansas, Dept Phys & Astron, Lawrence, KS 66045 USA
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[1] Univ Kansas, Dept Phys & Astron, Lawrence, KS 66045 USA
关键词:
WS2;
nanodiscs;
plasmonic;
photodetectors;
transfer-free;
optoelectronics;
ENHANCED RAMAN-SPECTROSCOPY;
HIGH-QUALITY;
GRAPHENE;
MONOLAYER;
EFFICIENT;
GROWTH;
NANOPARTICLES;
D O I:
10.1021/acsami.9b09262
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
Two-dimensional material van der Waals (vdW) heterostructures provide an excellent platform for design of novel optoelectronics. In this work, transition-metal dichalcogenide WS2 nanodiscs (WS2-NDs) of lateral dimension of 200-400 nm and layer number of 4-7 were synthesized on graphene using a layer-by-layer, transfer-free chemical vapor deposition. On this WS2-NDs/graphene vdW heterostructures, localized surface plasmonic resonance (LSPR) was achieved, resulting in remarkably enhanced light absorption as compared to the counterpart devices with a continuous WS2 layer (WS2-CL/graphene). Remarkably, the photoresponsivity of 6.4 A/W on the WS2-NDs/graphene photodetectors is seven times higher than that (0.91 A/W) of the WS2-CL/graphene vdW heterostructures at an incident 550 nm light intensity of 10 mu W/cm(2). Furthermore, the WS2-NDs/graphene photodetectors exhibit higher sensitivity to lower lights. Under 550 nm light illumination of 3 mu W/cm(2), which is beyond the sensitivity limit of the WS2-CL/graphene photodetectors, high photoresponsivity of 8.05 A/W and detectivity of 2.8 x 10(10) Jones are achieved at V-sd = 5 V. This result demonstrates that the LSPR WS2-NDs/graphene vdW heterostructure is promising for scalable high-performance optoelectronics applications.
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页码:33390 / 33398
页数:9
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