Investigations on electron beam evaporated Cu(In0.85Ga0.15)Se2 thin film solar cells

被引：26

作者：

Venkatachalam, M. ^{[1
]}

Kannan, M. D. ^{[1
]}

Muthukumarasamy, N. ^{[2
]}

Prasanna, S. ^{[1
]}

Jayakumar, S. ^{[1
]}

Balasundaraprabhu, R. ^{[1
]}

Saroja, M. ^{[3
]}

机构：

[1] PSG Coll Technol, Dept Phys, Thin Film Ctr, Coimbatore, Tamil Nadu, India

[2] Coimbatore Inst Technol, Dept Phys, Coimbatore, Tamil Nadu, India

[3] Erode Arts Coll, Dept Elect, Erode, India

来源：

SOLAR ENERGY | 2009年 / 83卷 / 09期

关键词：

CIGS; Electron beam deposition; Solar cells; STRUCTURAL-PROPERTIES; ELECTRODEPOSITION;

D O I：

10.1016/j.solener.2009.06.003

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

CIGS bulk with composition of CuIn0.85Ga0.15Se2 was synthesized by direct reaction of elemental copper, indium, gallium and selenium. CIGS thin films were then deposited onto well-cleaned glass substrates using the prepared bulk alloy by electron beam deposition method. The structural properties of the deposited films were studied using X-ray diffraction technique. The as-deposited CIGS films were found to be amorphous. On annealing, the films crystallized with a tetragonal chalcopyrite structure. An intermediate Cu-rich phase precipitated at 200 degrees C and dissociated at higher annealing temperatures. Average grain size calculated from the XRD spectra indicated that the films had a nano-crystalline structure and was further corroborated by AFM analysis of the sample surface. The chemical constituents present in the deposited CIGS films were identified using energy dispersive X-ray analysis. CIGS based solar cells were then fabricated on molybdenum and ITO coated glass substrates and the efficiencies have been evaluated. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：1652 / 1655

页数：4

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