Modification in the chemical bath deposition apparatus, growth and characterization of CdS semiconducting thin films for photovoltaic applications

被引:108
作者
Sasikala, G [1 ]
Thilakan, P
Subramanian, C
机构
[1] Anna Univ, Ctr Crystal Growth, Madras 600025, Tamil Nadu, India
[2] ENEA, Ctr Ric Portici, I-80055 Protici Napoli, Italy
基金
中国国家自然科学基金;
关键词
chemical bath deposition; CdS; thin films; characterization;
D O I
10.1016/S0927-0248(99)00170-1
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
In this paper, growth and characterization of CdS thin films by Chemical Bath Deposition (CBD) technique using the reaction between CdCl2, (NH2)(2)CS and NH3 in an aqueous solution has been reported. The parameters actively involved in the process of deposition have been identified. A commonly available CBD system has been sucessfully modified to obtain the precious control over the pH of the solution at 90 degrees C during the deposition and studies have been made to understand the fundamental parameters like concentrations of the solution, pH and temperature of the solution involved in the chemical bath deposition of CdS. It is confirmed that the pH of the solution plays a vital role in the quality of the CBD-CdS films. Structural, optical and electrical properties have been analysed for the as-deposited and annealed films. XRD studies on the CBD-CdS films reveal that the change in Cadmium ion concentration in the bath results in the change in crystallization from cubic phase with (1 1 1) predominant orientation to a hexagonal phase with (0 0 2) predominant orientation. The structural changes due to varying cadmium ion concentration in the bath affects the optical and electrical properties. Optimum electrical resistivity, band gap and refractive index value are observed for the annealed films deposited from 0.8 M cadmium ion concentration. The films are suitable for solar cell fabrication. Further on, annealing the samples at 350 degrees C in H-2 for 30 min resulted in an increased diffraction intensity as well as shifts in the peak towards lower scattering angles due to enlarged CdS unit cell, This in turn brought about an increase in the lattice parameters and narrowing in the band-gap values. The results are compared with the analysis of previous work. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:275 / 293
页数:19
相关论文
共 27 条
  • [1] THE MECHANISM OF ELECTRODEPOSITION OF CADMIUM-SULFIDE ON INERT METALS FROM DIMETHYLSULFOXIDE SOLUTION
    BARANSKI, AS
    FAWCETT, WR
    MCDONALD, AC
    [J]. JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1984, 160 (1-2): : 271 - 287
  • [2] DETERMINATION OF REFRACTIVE-INDEX OF THIN-FILMS BEYOND THE ABSORPTION-EDGE
    BHATTACHARYYA, D
    BHATTACHARYYA, SK
    CHAUDHURI, S
    PAL, AK
    [J]. VACUUM, 1993, 44 (10) : 979 - 981
  • [3] CDTE/CDS SOLAR-CELLS WITH TRANSPARENT CONTACTS
    BIRKMIRE, RW
    MCCANDLESS, BE
    SHAFARMAN, WN
    [J]. SOLAR CELLS, 1988, 23 (1-2): : 115 - 126
  • [4] BONNET D, 1995, P 13 EUR PHOT SOL EN, P1456
  • [5] SOLUTION-GROWN CADMIUM-SULFIDE FILMS FOR PHOTOVOLTAIC DEVICES
    CHU, TL
    CHU, SS
    SCHULTZ, N
    WANG, C
    WU, CQ
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (09) : 2443 - 2446
  • [6] 14.6-PERCENT EFFICIENT THIN-FILM CADMIUM TELLURIDE HETEROJUNCTION SOLAR-CELLS
    CHU, TL
    CHU, SS
    BRITT, J
    FEREKIDES, C
    WANG, C
    WU, CQ
    ULLAL, HS
    [J]. IEEE ELECTRON DEVICE LETTERS, 1992, 13 (05) : 303 - 304
  • [7] Clemminck I., 1992, International Journal of Solar Energy, V12, P67, DOI 10.1080/01425919208909751
  • [8] HIGH-EFFICIENCY SOLAR-CELLS WITH CDS WINDOW LAYERS
    COUTTS, TJ
    [J]. THIN SOLID FILMS, 1982, 90 (04) : 451 - 460
  • [9] Low resistivity cubic phase CdS films by chemical bath deposition technique
    DEMELO, O
    HERNANDEZ, L
    ZELAYAANGEL, O
    LOZADAMORALES, R
    BECERRIL, M
    VASCO, E
    [J]. APPLIED PHYSICS LETTERS, 1994, 65 (10) : 1278 - 1280
  • [10] EFFECT OF CATION-ANION RATIO ON CRYSTALLINITY AND OPTICAL-PROPERTIES OF CADMIUM-SULFIDE FILMS PREPARED BY CHEMICAL SPRAY DEPOSITION PROCESS
    GUPTA, BK
    AGNIHOTRI, OP
    [J]. SOLID STATE COMMUNICATIONS, 1977, 23 (05) : 295 - 300