Investigation of reversible and irreversible polarizations in thin films of SrBi2(Ta0.5,Nb0.5)2O9

被引:16
作者
Bhattacharyya, S [1 ]
Saha, S [1 ]
Krupanidhi, SB [1 ]
机构
[1] Indian Inst Sci, Mat Res Ctr, Bangalore 560012, Karnataka, India
关键词
polarization; hysteresis loop; ferroelectrics;
D O I
10.1016/S0040-6090(02)00293-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The reversible and irreversible components of the total polarization in a thin film of SrBi2(Ta-0.5,Nb-0.5)(2)O-9 were calculated. The C-V loop was integrated to obtain the reversible part of the total polarization. The reversible polarization was only 20% of the total polarization and showed almost no hysteresis. However, the dielectric constant due to the total polarization was almost the same as that for the reversible polarization in the saturation region of the large signal P-E hysteresis loop. The reversible part was subtracted from the total polarization to calculate the irreversible counterpart of it. The irreversible polarization showed a near-square shaped hysteresis loop, while the reversible polarization was obeying the Rayleigh law. The small signal hysteresis was simulated from the parameters obtained from the Rayleigh-curve fit with the experimental curve and then it was compared with the result obtained from direct measurement with small amplitude. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:155 / 160
页数:6
相关论文
共 50 条
  • [31] A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films
    Wei, Yingfen
    Nukala, Pavan
    Salverda, Mart
    Matzen, Sylvia
    Zhao, Hong Jian
    Momand, Jamo
    Everhardt, Arnoud S.
    Agnus, Guillaume
    Blake, Graeme R.
    Lecoeur, Philippe
    Kooi, Bart J.
    Iniguez, Jorge
    Dkhil, Brahim
    Noheda, Beatriz
    NATURE MATERIALS, 2018, 17 (12) : 1095 - +
  • [32] Time-Dependent Imprint in Hf0.5Zr0.5O2 Ferroelectric Thin Films
    Takada, Kenshi
    Takarae, Shuya
    Shimamoto, Kento
    Fujimura, Norifumi
    Yoshimura, Takeshi
    ADVANCED ELECTRONIC MATERIALS, 2021, 7 (08)
  • [33] Epitaxial Ferroelectric La-Doped Hf0.5Zr0.5O2 Thin Films
    Song, Tingfeng
    Bachelet, Romain
    Saint-Girons, Guillaume
    Solanas, Raul
    Fina, Ignasi
    Sanchez, Florencio
    ACS APPLIED ELECTRONIC MATERIALS, 2020, 2 (10): : 3221 - 3232
  • [34] Ferroelectric SrBi2Ta2O9 thin films made by one and two step metalorganic chemical vapor deposition
    Li, TK
    Stall, RA
    Zhu, YF
    Desu, SB
    Peng, CH
    MINIATURIZED SYSTEMS WITH MICRO-OPTICS AND MICROMECHANICS II, 1997, 3008 : 365 - 372
  • [35] Ferroelectric and luminescent properties of Eu-doped SrBi2Ta2O9 films
    Aizawa, Koji
    Ohtani, Yusuke
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (10B): : 6944 - 6947
  • [36] Dispersion in Ferroelectric Switching Performance of Polycrystalline Hf0.5Zr0.5O2 Thin Films
    Hyun, Seung Dam
    Park, Hyeon Woo
    Kim, Yu Jin
    Park, Min Hyuk
    Lee, Young Hwan
    Kim, Han Joon
    Kwon, Young Jae
    Moon, Taehwan
    Kim, Keum Do
    Lee, Yong Bin
    Kim, Baek Su
    Hwang, Cheol Seong
    ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (41) : 35374 - 35384
  • [37] Interfacial Regulation of Dielectric Properties in Ferroelectric Hf0.5Zr0.5O2 Thin Films
    Shao, Minghao
    Lu, Tianqi
    Wang, Zhibo
    Liu, Houfang
    Zhao, Ruiting
    Liu, Xiao
    Zhao, Xiaoyue
    Liang, Renrong
    Yang, Yi
    Ren, Tian-Ling
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021, 9 : 1093 - 1097
  • [38] Reversible fatigue-rejuvenation procedure and its mechanism in Hf0.5Zr0.5O2 epitaxial films
    Liu, Zhuohui
    Zhong, Hai
    Xie, Donggang
    He, Meng
    Wang, Can
    Lyu, Hangbing
    Yang, Guozhen
    Jin, Kuijuan
    Ge, Chen
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2023, 35 (20)
  • [39] Impact of Iridium Oxide Electrodes on the Ferroelectric Phase of Thin Hf0.5Zr0.5O2 Films
    Mittmann, Terence
    Szyjka, Thomas
    Alex, Hsain
    Istrate, Marian Cosmin
    Lomenzo, Patrick D.
    Baumgarten, Lutz
    Mueller, Martina
    Jones, Jacob L.
    Pintilie, Lucian
    Mikolajick, Thomas
    Schroeder, Uwe
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2021, 15 (05):
  • [40] Improving the endurance for ferroelectric Hf0.5Zr0.5O2 thin films by interface and defect engineering
    Zhou, Jing
    Guan, Yue
    Meng, Miao
    Hong, Peizhen
    Ning, Shuai
    Luo, Feng
    APPLIED PHYSICS LETTERS, 2024, 124 (09)