Nonhysteretic behavior inside the hysteresis loop of VO2 and its possible application in infrared imaging

被引:66
作者
Gurvitch, M. [1 ,2 ]
Luryi, S. [1 ,3 ]
Polyakov, A. [1 ]
Shabalov, A. [1 ]
机构
[1] SUNY Stony Brook, NY State Ctr Adv Sensor Technol Sensor CAT, Stony Brook, NY 11794 USA
[2] SUNY Stony Brook, Dept Phys & Astron, Stony Brook, NY 11794 USA
[3] SUNY Stony Brook, Dept Elect & Comp Engn, Stony Brook, NY 11794 USA
关键词
INSULATOR-TRANSITION; FILMS; ARRAYS; PERFORMANCE; DETECTORS; MODEL;
D O I
10.1063/1.3243286
中图分类号
O59 [应用物理学];
学科分类号
摘要
In the resistive phase transition in VO2, temperature excursions taken from points on the major hysteresis loop produce minor loops. For sufficiently small excursions these minor loops degenerate into single-valued, nonhysteretic branches (NHBs) linear in log(rho) versus T and having essentially the same or even higher temperature coefficient of resistance (TCR) as the semiconducting phase at room temperature. We explain this behavior based on the microscopic picture of percolating phases. Similar short NHBs are found in otherwise hysteretic optical reflectivity. We discuss the opportunities NHBs present for infrared imaging technology based on resistive microbolometers. It is possible to choose a NHB with 10(2)-10(3) times smaller resistivity than in a pure semiconducting phase, thus providing a microbolometer operating without hysteresis, with low tunable resistivity, and high TCR. Unique features of the proposed method and projected figures of merit are discussed in the context of uncooled focal plane array IR visualization technology. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3243286]
引用
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页数:15
相关论文
共 39 条
[1]  
ANDREEV VN, 1980, SOV PHYS JETP, V52, P684
[2]  
BERGLUND CN, 1969, PHYS REV, V185, P1022, DOI 10.1103/PhysRev.185.1022
[3]  
CHUDNOVSKYI F, 2002, Patent No. 2002099896
[4]  
Coath JA, 1999, P SOC PHOTO-OPT INS, V3738, P555
[5]   Monolithic two-dimensional arrays of micromachined microstructures for infrared applications [J].
Cole, BE ;
Higashi, RE ;
Wood, RA .
PROCEEDINGS OF THE IEEE, 1998, 86 (08) :1679-1686
[6]   A hysteresis model for a vanadium dioxide transition-edge microbolometer [J].
de Almeida, LAL ;
Deep, GS ;
Lima, AMN ;
Neff, HF ;
Freire, RCS .
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 2001, 50 (04) :1030-1035
[7]   Thermal dynamics of VO2 films within the metal-insulator transition:: Evidence for chaos near percolation threshold [J].
de Almeida, LAL ;
Deep, GS ;
Lima, AMN ;
Neff, H .
APPLIED PHYSICS LETTERS, 2000, 77 (26) :4365-4367
[8]   On the Hooge relation in semiconductors and metals [J].
Dmitriev, A. P. ;
Levinshtein, M. E. ;
Rumyantsev, S. L. .
JOURNAL OF APPLIED PHYSICS, 2009, 106 (02)
[9]  
Flannery R. E., 1992, Proceedings of the SPIE - The International Society for Optical Engineering, V1689, P379, DOI 10.1117/12.137968
[10]  
Gruzdeva AP, 1997, J OPT TECHNOL+, V64, P1110