Analysis of 4He implanted in Al foils using the 4He(p,p)4He backscattering interaction

被引：1
|
作者：
El Masri, Y
Moroso, N
Zaconte, V
Heitz, C
Cabrera, J
Dufauquez, C
Roberfroid, V
Van Mol, J
Lehmann, J
Vanderbist, F
Leleux, P
Couder, M
机构：
[1] Univ Catholique Louvain, FNRS, B-1348 Louvain, Belgium
[2] Univ Catholique Louvain, Inst Nucl Phys, B-1348 Louvain, Belgium
[3] Univ Roma Tor Vergata, I-00133 Rome, Italy
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2002年 / 197卷 / 3-4期
关键词：
D O I：
10.1016/S0168-583X(02)01467-2
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Solid He-4 targets were prepared by implantation of He ions of various energies into thin and thick Al host foils. He concentrations and implantation profiles were analyzed through the proton backscattering technique taking advantage of the He-4(p,p)He-4 strong resonance around 2.2 MeV incident energy. The He retention was found to depend strongly on the Al foil thickness, but on the other hand it was found very stable versus the time after implantation. The consistency of the SIMNRA code was tested in different situations. (C) 2002 Elsevier Science B.V. All rights reserved.
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收藏
页码：271 / 277
页数：7
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