Optical and electrical characterizations of cerium oxide thin films

被引：97

作者：

Chiu, Fu-Chien ^{[1
]}

Lai, Chih-Ming ^{[1
]}

机构：

[1] Ming Chuan Univ, Dept Elect Engn, Taoyuan Cty 333, Taiwan

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2010年 / 43卷 / 07期

关键词：

DIELECTRIC-PROPERTIES; CEO2;

D O I：

10.1088/0022-3727/43/7/075104

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical dielectric function of cerium oxide (CeO2) was characterized by the spectroscopic ellipsometry ( SE) technique using the Kramers-Kronig relation and the Tauc-Lorentz (TL) dispersion model. Experimental results showed that the bandgap energy and refractive index at 632.8 nm of CeO2 are about 3.23 +/- 0.05 eV and 2.33 +/- 0.08, respectively. Based on the optical properties, the electrical conduction mechanisms in CeO2 thin films are determined to be Schottky emission in a medium electric field (0.5-1.6 MV cm(-1)) from 350 to 500 K and Poole-Frenkel emission in a high electric field (>2.36 MV cm(-1)) from 450 to 500 K. Accordingly, the conduction band offsets between Al and CeO2 and the trap energy level are about 0.62 +/- 0.01 eV and 1.53 +/- 0.01 eV, respectively.

引用

收藏

页数：5

相关论文

共 30 条

[1] Interfacial and Electrical Characterization in Metal-Oxide-Semiconductor Field-Effect Transistors with CeO2 Gate Dielectric [J].

Chiu, Fu-Chien ;

Chen, Shuang-Yuan ;

Chen, Chun-Heng ;

Chen, Hung-Wen ;

Huang, Heng-Sheng ;

Hwang, Huey-Liang .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (04)

[2] Interface engineering for Ge metal-oxide-semiconductor devices [J].

Dimoulas, A. ;

Brunco, D. P. ;

Ferrari, S. ;

Seo, J. W. ;

Panayiotatos, Y. ;

Sotiropoulos, A. ;

Conard, T. ;

Caymax, M. ;

Spiga, S. ;

Fanciulli, M. ;

Dieker, Ch. ;

Evangelou, E. K. ;

Galata, S. ;

Houssa, M. ;

Heyns, M. M. .

THIN SOLID FILMS, 2007, 515 (16) :6337-6343

[3] Electron localization determines defect formation on ceria substrates [J].

Esch, F ;

Fabris, S ;

Zhou, L ;

Montini, T ;

Africh, C ;

Fornasiero, P ;

Comelli, G ;

Rosei, R .

SCIENCE, 2005, 309 (5735) :752-755

[4] Correlation of Charge Buildup and Stress-Induced Leakage Current in Cerium Oxide Films Grown on Ge (100) Substrates [J].

Evangelou, Evangelos K. ;

Rahman, Shahinur ;

Dimoulas, A. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (03) :399-407

[5] Conductivity and dielectric properties of thin amorphous cerium dioxide films [J].

Grosse, V. ;

Bechstein, R. ;

Schmidl, F. ;

Seidel, P. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (04) :1146-1149

[6] SPECTROSCOPIC ELLIPSOMETRY STUDY OF CERIUM DIOXIDE THIN-FILMS GROWN ON SAPPHIRE BY RF MAGNETRON SPUTTERING [J].

GUO, S ;

ARWIN, H ;

JACOBSEN, SN ;

JARRENDAHL, K ;

HELMERSSON, U .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (10) :5369-5376

[7]

Gusev E.P., 2001, IEDM Tech. Dig, P451, DOI DOI 10.1109/IEDM.2001.979537

[8] Thermodynamic stability of binary oxides in contact with silicon [J].

Hubbard, KJ ;

Schlom, DG .

JOURNAL OF MATERIALS RESEARCH, 1996, 11 (11) :2757-2776

[9] EPITAXIAL-GROWTH OF CEO2 LAYERS ON SILICON [J].

INOUE, T ;

YAMAMOTO, Y ;

KOYAMA, S ;

SUZUKI, S ;

UEDA, Y .

APPLIED PHYSICS LETTERS, 1990, 56 (14) :1332-1333

[10] DATA-ANALYSIS FOR SPECTROSCOPIC ELLIPSOMETRY [J].

JELLISON, GE .

THIN SOLID FILMS, 1993, 234 (1-2) :416-422