Magnetoresistance and conductivity exponents of quench-condensed ultra-thin films of Bi

被引：0
|
作者：
Das Gupta, K [1 ]
Sambandamurthy, G [1 ]
Chandrasekhar, N [1 ]
机构：
[1] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India
来源：
PHYSICA B | 2000年 / 284卷
关键词：
conductivity exponent; magnetoresistance; quench-condensed Bi films;
D O I：
10.1016/S0921-4526(99)02937-3
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have studied the magnetoresistance (MR) and evolution of conductivity with thickness of quench-condensed Bismuth films on substrates of various dielectric constants. Our results indicate a negative intial MR proportional to the square of the magnetic field. The conductance shows a power-law kind of dependence on thickness, with an exponent close to 1.33, characterisitic of a 2-D percolating system, only when the films are grown on a thin (similar to 10 Angstrom) Germanium underlayer but not otherwise. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：1976 / 1977
页数：2
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