Quantum-continuum calculation of the surface states and electrical response of silicon in solution

被引:19
作者
Campbell, Quinn [1 ]
Dabo, Ismaila
机构
[1] Penn State Univ, Dept Mat Sci & Engn, Mat Res Inst, University Pk, PA 16802 USA
基金
美国国家科学基金会;
关键词
MOLECULAR-DYNAMICS; 1ST PRINCIPLES; TIO2; ANATASE; WATER; INTERFACE; REDUCTION; OXYGEN; EVOLUTION; RUTILE;
D O I
10.1103/PhysRevB.95.205308
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A wide range of electrochemical reactions of practical importance occur at the interface between a semiconductor and an electrolyte. We present an embedded density-functional theory method using the recently released self-consistent continuum solvation (SCCS) approach to study these interfaces. In this model, a quantum description of the surface is incorporated into a continuum representation of the bending of the bands within the electrode. The model is applied to understand the electrical response of silicon electrodes in solution, providing microscopic insights into the low-voltage region, where surface states determine the electrification of the semiconductor electrode.
引用
收藏
页数:8
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