Prolonged Annealing Improves Hole Transport of Silicon Heterojunction Solar Cells

被引：9

作者：

Huang, Shenglei ^{[1
,2
,3
]}

Liu, Wenzhu ^{[1
,3
]}

Li, Xiaodong ^{[1
,3
]}

Li, Zhenfei ^{[1
,2
]}

Wu, Zhuopeng ^{[1
,3
]}

Huang, Wei ^{[1
,3
]}

Yang, Yuhao ^{[1
]}

Jiang, Kai ^{[1
,3
]}

Shi, Jianhua ^{[1
]}

Zhang, Liping ^{[1
,3
]}

Meng, Fanying ^{[1
,3
]}

Liu, Zhengxin ^{[1
,3
]}

机构：

[1] Chinese Acad Sci, Res Ctr New Energy Technol RCNET, Shanghai Inst Microsyst & Informat Technol SIMIT, Shanghai 201800, Peoples R China

[2] ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China

[3] Univ Chinese Acad Sci UCAS, Beijing 100049, Peoples R China

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2021年 / 15卷 / 12期

基金：

中国国家自然科学基金;

关键词：

annealing; hole transport; hydrogen diffusion; silicon heterojunction solar cells; work function;

D O I：

10.1002/pssr.202100015

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The Schottky barrier is a fundamental issue when an n-type transparent conductive oxide (TCO) is contacted with p-type hydrogenated amorphous silicon (p-a-Si:H) in silicon heterojunction (SHJ) solar cells. Herein, it is found that the hydrogen (H) atoms in p-a-Si:H diffuse into tungsten-doped indium oxide (IWO) during annealing, which improves the electric properties of both the IWO films and the p-a-Si:H/IWO interface. H diffusion reduces the surface work function of p-a-Si:H, and thus reduces the Schottky barrier between the p-a-Si:H and the IWO. Consequently, it improves the hole transport of SHJ solar cells; i.e., both the fill factor (FF) and power conversion efficiency (PCE) substantially increase. These findings provide a new strategy to optimize the FF of SHJ solar cells.

引用

页数：6

共 29 条

[1] Improving the a-Si:H(p) rear emitter contact of n-type silicon solar cells [J].

Bivour, Martin ;

Reichel, Christian ;

Hermle, Martin ;

Glunz, Stefan W. .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2012, 106 :11-16

[2] 22.8-PERCENT EFFICIENT SILICON SOLAR-CELL [J].

BLAKERS, AW ;

WANG, A ;

MILNE, AM ;

ZHAO, JH ;

GREEN, MA .

APPLIED PHYSICS LETTERS, 1989, 55 (13) :1363-1365

[3] Role of front contact work function on amorphous silicon/crystalline silicon heterojunction solar cell performance [J].

Centurioni, E ;

Iencinella, D .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (03) :177-179

[4] Optimisation of doped amorphous silicon layers applied to heterojunction solar cells [J].

de Nicolas, S. Martin ;

Munoz, D. ;

Ozanne, A. S. ;

Nguyen, N. ;

Ribeyron, P. J. .

PROCEEDINGS OF THE SILICONPV 2011 CONFERENCE (1ST INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS), 2011, 8 :226-231

[5]

De Wolf S., 2012, GREEN, V2, P1015

[6] Industrial Silicon Solar Cells Applying the Passivated Emitter and Rear Cell (PERC) Concept-A Review [J].

Dullweber, Thorsten ;

Schmidt, Jan .

IEEE JOURNAL OF PHOTOVOLTAICS, 2016, 6 (05) :1366-1381

[7] Tunnel oxide passivated contacts as an alternative to partial rear contacts [J].

Feldmann, Frank ;

Bivour, Martin ;

Reichel, Christian ;

Steinkemper, Heiko ;

Herm, Martin ;

Glunz, Stefan W. .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2014, 131 :46-50

[8] DC-sputtered ZnO:Al as transparent conductive oxide for silicon heterojunction solar cells with μc-Si:H emitter [J].

Ghahfarokhi, Omid Madani ;

Chakanga, Kambulakwao ;

Geissendoerfer, Stefan ;

Sergeev, Oleg ;

von Maydell, Karsten ;

Agert, Carsten .

PROGRESS IN PHOTOVOLTAICS, 2015, 23 (10) :1340-1352

[9] Interpretation of the degradation of silicon HIT solar cells due to inadequate front contact TCO work function [J].

Ghannam, Moustafa ;

Abdulraheem, Yaser ;

Shehada, Ghadah .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2016, 145 :423-431

[10] Effect of crystalline structure on optical and electrical properties of IWOH films fabricated by low-damage reactive plasma deposition at room temperature [J].

Huang, Wei ;

Shi, Jianhua ;

Liu, Yiyang ;

Meng, Fanying ;

Liu, Zhengxin .

JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 843

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