Fast Visible-Light Phototransistor Using CVD-Synthesized Large-Area Bilayer WSe2

被引：0

作者：

Liu, Pang-Shiuan ^{[1
,2
]}

Chen, Chang-Hsiao ^{[3
]}

Hsu, Wei-Ting ^{[4
]}

Lin, Chih-Pin ^{[1
,2
]}

Lin, Tzu-Ping ^{[1
,2
]}

Chi, Li-Jen ^{[1
,2
]}

Chang, Chao-Yuan ^{[1
,2
]}

Wu, Shih-Chieh ^{[1
,2
]}

Chang, Wen-Hao ^{[4
]}

Li, Lain-Jong ^{[3
]}

Hou, Tuo-Hung ^{[1
,2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu, Taiwan

[3] Acad Sinica, Inst Atom & Mol Sci, Taipei 10617, Taiwan

[4] Natl Chiao Tung Univ, Dept Eletrophys, Hsinchu, Taiwan

来源：

2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2014年

关键词：

MOS2; TRANSISTORS;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

P-channel transition metal dichalcogenide ultrathin-body phototransistor (UTB-PT) with a response time as fast as 100 mu s has been demonstrated for the first time using the CVD-synthesized large-area bilayer WSe2. Because of its excellent compatibility with mass production, the application of WSe2 UTB-PT for high-speed proximity interactive display has been proposed.

引用

页数：4

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